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Fabrication and Characterization of Photojunction Field-Effect Transistor

  • Yogesh KumarEmail author
  • Hemant Kumar
  • Gopal Rawat
  • Chandan Kumar
  • Varun Goel
  • Bhola N. Pal
  • Satyabrata Jit
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 526)

Abstract

In this article, ZnO Quantum Dot (QD)-based photojunction field-effect transistor (photo-JFET) has been fabricated for the detection of ultraviolet (UV) spectrum. The effects of photojunction between the ZnO Quantum Dots (QDs) and deep work function transparent MoO2 is analyzed under the illumination of UV. The illuminated optical power density acts as a floating gate for the JFET. The device was fabricated on a glass substrate using interdigitated electrodes (Ag) followed by ZnO QDs layer and MoO2. The dark current between source and drain was found minimum, 2.79 µA/cm2, in the case of photojunction as compared to the metal semiconductor metal (MSM)ZnO QDs photoconductor 19.32 µA/cm2 at an applied bias of 10 V. The reduction in dark current is attributed due to the effect of the junction formed between ZnO QDs and MoO2 with the rectification ratio of ~347. The MoO2 depletes the ZnO QDs channel between the electrodes and reduces the dark current which in turn helps to improved photodetector characteristics.

Keywords

Photo-JFET ZnO quantum dots Schottky junction 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Yogesh Kumar
    • 1
    • 3
    Email author
  • Hemant Kumar
    • 1
  • Gopal Rawat
    • 1
  • Chandan Kumar
    • 1
  • Varun Goel
    • 3
  • Bhola N. Pal
    • 2
  • Satyabrata Jit
    • 1
  1. 1.Department of Electronics EngineeringIIT (BHU) VaranasiVaranasiIndia
  2. 2.School of Material Science and TechnologyIIT (BHU) VaranasiVaranasiIndia
  3. 3.Jaypee Institute of Information TechnologyNoidaIndia

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