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Capacitively Coupled Pixel Detectors: From Design Simulations to Test Beam

  • Mateus Vicente Barreto Pinto
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 213)

Abstract

Capacitively Coupled Pixel Detectors (CCPDs) are now possible due to new HV-CMOS sensors, where the high voltage (necessary to deplete the sensor) can be applied on CMOS circuits, allowing the sensor to be capacitively coupled to a read out ASIC, avoiding the expensive bump-bonds. An extensive characterisation work, in the ATLAS ITk Upgrade framework, is done in this new sensor technology. TCAD simulations of the pixel designs and TCT measurements on real devices are shown. In addition, automatised wafer probing measurements and the flip-chip, of the sensors with the read-out chips, will be presented. To conclude, test beam measurements done at CERN SPS and at Fermilab, using the UniGE FE-I4 Telescope will be shown and discussed.

Keywords

CCPD Pixel TCAD TCT Flip-chip Test beam HV-CMOS Silicon sensor 

References

  1. 1.
    ATLAS Collaboration: JINST 3, S08003 (2008)Google Scholar
  2. 2.
    Letter of Intent for the Phase-II Upgrade of the ATLAS Experiment, Technical report, CERN-LHCC-2012-022, LHCC-I-023, CERN, Geneva (2012)Google Scholar
  3. 3.
    Liu, H., et al.: Development of a modular test system for the silicon sensor R&D of the ATLAS upgrade. JINST 12, P01008 (2017)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd.  2018

Authors and Affiliations

  1. 1.Université de GenèveGenevaSwitzerland

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