A Monolithic Pixel Sensor with Fine Space-Time Resolution Based on Silicon-on-Insulator Technology for the ILC Vertex Detector
We are developing a new monolithic pixel sensor with Silicon-on-Insulator (SOI) technology for the ILC vertex detector system. The new SOI sensor SOFIST can store both the position and timing information of charged particles. The first prototype sensor with the pixel pitch of 20 µm was evaluated at 120 GeV proton beam. The position resolution was about 1.7 µm. We are currently designing next prototype sensor chips with the pixel circuit optimized for 3D stacking technology.
KeywordsSOI pixel detector Semiconductor detector ILC
This work was supported by MEXT KAKENHI Grant-in-Aid for Scientific Research on Innovative Areas 25109006, the Japan/US Cooperation Program in the Field of High Energy Physics. We wish to thank the staff of Fermilab Test Beam Facility for the support of our beam test. This work was also supported by the VLSI Design and Education Center (VDEC). The University of Tokyo, with the collaboration of Cadence Design Systems, Inc., Mentor Graphics Co., Ltd., and Synopsys, Inc.
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