Influence of Substrate Temperature on Optical Properties of Antimony Selenide Films by Thermal Evaporation
Antimony selenide is a binary single-phase semiconductor material with suitable optical band gap, large absorption coefficient, low cost and low toxicity and so on, and it is propitious for preparing absorption layer of a solar cell. In this work, Sb2Se3 thin films were prepared by the thermal evaporation. The crystal structure and surface morphology of the thin films were characterized by X-Ray diffraction (XRD) and atomic force microscope (AFM). The transmittance was measured by UV spectrophotometer, and then the optical band gap was calculated. The influence of substrate temperature on the optical properties of the thin films was studied. The grain distribution of the Sb2Se3 thin films is relatively uniform density, no crack, and the particle diameter is about 0.25 μm. With the increase of the substrate temperature, the crystallization of the thin films is higher and higher, the thin films’ transmittance is only 10–18% in visible region, and the average thickness of the thin films is 4.1576 μm. Through calculation, the average optical band gap of the film is 1.69 eV, while the short circuit photocurrent and the open circuit voltage are 0.0648 mA and 0.8359 V respectively.
KeywordsAntimony selenide Thin film Thermal evaporation Substrate temperature Optical performance
This work was supported by the National Natural Science Foundation of China (51372283), the Program for Innovation Teams in University of Chongqing, China (Grant No. CXTDX201601032), the Program of Science and Technology Innovation of Chongqing University of Science & Technology (YKJCX1620214).
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