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Modeling and Simulation of 1/f Noise During Threshold Switching for Phase Change Memory

  • Rutu Parekh
  • Maryam Shojaei Baghini
  • Bipin Rajendran
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 475)

Abstract

In phase change memory (PCM), the threshold switching effect contributes to the programming speed and can cause undesirable disturbs during the read operation. The impact of 1/f noise fluctuations on the transient switching is crucial in designing the read/program conditions and to estimate the programming times and read disturb probability. In this work, we have developed a VerilogA compact model build on analytical model for subthreshold conduction and threshold switching in amorphous chalcogenide with the effect of 1/f noise. The model is simulated in Cadence environment to study the effect on delay and switching time for applied voltage along with investigation of PCM device scaling on threshold voltage and programming speed.

Keywords

Phase change memory (PCM) 1/f noise Simulation 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Rutu Parekh
    • 1
  • Maryam Shojaei Baghini
    • 2
  • Bipin Rajendran
    • 3
  1. 1.DA-IICTGandhinagarIndia
  2. 2.IIT-BombayPowai, MumbaiIndia
  3. 3.New Jersey Institute of TechnologyNewarkUSA

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