Analysis of N+N− Epi-Source Asymmetric Double Gate FD-SOI MOSFET
The conventional scaling of device dimension uses high doping which leads to degraded mobility and large undesirable junction capacitances. This paper provides a new idea to overcome the short-channel effects (SCEs) in the MOSFETs whose gate length lies in the deep submicrometer range. Here asymmetric DG-FD-SOI MOSFET having N+N− epi-source is proposed whose performance is analyzed. The ION/IOFF ratio of the proposed device is nearly 1010 which is good enough for fast switching applications.
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