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A Novel Neuro-Space Mapping Technique Incorporating Self-heating Effect for High-Power Transistor Modeling

  • Lin Zhu
  • Jian Zhao
  • Wenyuan Liu
  • Lei Pan
  • Deliang Liu
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 463)

Abstract

Accurate modeling of self-heating effect of high-power transistor is critical for reliable design of microwave circuit and system. In this paper, a novel neuro-space mapping (Neuro-SM) method incorporating self-heating effect is presented. By modifying the voltage and temperature relationships in the existing electro-thermal nonlinear model, the proposed Neuro-SM produces a new model exceeding the accuracy limit of the model. To accurately describe the self-heating effect, separate mappings for temperature and voltage at gate and drain are used as the mapping structure in the proposed method. The mappings combined with thermal sub-circuit including thermal resistance-capacitance parallel with thermal current are used to describe the self-heating effect. The validity and efficiency of the proposed Neuro-SM method incorporating self-heating effect are demonstrated through a modeling example of a high-power transistor used in cellular infrastructure market.

Keywords

Neuro-SM Self-heating effect High-power transistor modeling 

Notes

Acknowledgments

This work is supported by the Key project of Tianjin Natural Science Foundation (No. 16JCZDJC38600).

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Lin Zhu
    • 1
  • Jian Zhao
    • 1
  • Wenyuan Liu
    • 2
  • Lei Pan
    • 1
  • Deliang Liu
    • 3
  1. 1.Tianjin Chengjian UniversityTianjinChina
  2. 2.Tianjin UniversityTianjinChina
  3. 3.Shijiazhuang Mechanical Engineering CollegeShijiazhuangChina

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