Microprobe Reflection High-Energy Electron Diffraction

  • Masakazu IchikawaEmail author


Microprobe reflection high-energy electron diffraction (μ-RHEED) is a reflection high-energy electron diffraction (RHEED) that uses focused electron beams with about 10 nm diameter. The focused electron beams with higher than 10 keV kinetic energy are irradiated on sample surfaces at grazing angles less than 5° to get RHEED patterns from the sample surface nanoareas and analyze their crystallinities.


Surface Interface Crystallinity Structure Topography 


  1. 1.
    Ichikawa, M., Doi, T., Hayakawa, K.: Observation of Si(111) and gold-deposited Si(111) surfaces using microprobe reflection high-energy electron diffraction. Surf. Sci. 159, 133–148 (1985)CrossRefGoogle Scholar
  2. 2.
    Watanabe, H., Kato, K., Uda, T., Fujita, K., Ichikawa, M., Kawamura, T., Terakura, K.: Kinetics of initial layer-by-layer oxidation of Si(001) surfaces. Phys. Rev. Lett. 80, 345–348 (1998)CrossRefGoogle Scholar
  3. 3.
    Watanabe, H., Ichikawa, M.: Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. Rev. Sci. Instrum. 67, 4185–4190 (1996)CrossRefGoogle Scholar
  4. 4.
    Maruno, S., Fujita, S., Watanabe, H., Kusumi, Y., Ichikawa, M.: A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope. Rev. Sci. Instrum. 68, 116–119 (1997)CrossRefGoogle Scholar
  5. 5.
    Shklyaev, A., Shibata, M., Ichikawa, M.: Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film. Appl. Phys. Lett. 72, 320–322 (1998)CrossRefGoogle Scholar
  6. 6.
    Harris, J.J., Joyce, B.A., Dobson, P.J.: Oscillations in the surface structure of Sn-Doped GaAs during growth by MBE. Surf. Sci. 103, L90–L96 (1981)CrossRefGoogle Scholar
  7. 7.
    Ichikawa, M., Doi, T.: Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction. Appl. Phys. Lett. 50, 1141–1143 (1987)CrossRefGoogle Scholar
  8. 8.
    Ichikawa, M.: Crystallographic analysis and observation of surface micro-areas using microprobe reflection high-energy electron diffraction. Mater. Sci. Rep. 4, 147–192 (1989)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Department of Applied Physics, Graduate School of EngineeringThe University of TokyoTokyoJapan

Personalised recommendations