Comparison Between the Performance of Trigate Junctionless Transistor and Double-Gate Junctionless Transistor with Same Device Length

  • Deepti Singh
  • Renu Vig
  • Charu Madhu
  • Ravneet Kaur
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 624)

Abstract

In this paper, we have compared double-gate junctionless transistor and trigate junctionless transistor for electrical parameters like Ion, Ioff, Ion/Ioff ratio, threshold voltage, drain-induced barrier lowering (DIBL). In CMOS technology, as we reduce the device dimensions, its performance gets affected due to short channel effects as well as leakage current. To minimize these short channel effects, different types of devices are introduced by the researchers. Junctionless transistor is a new CMOS technology and is easier to fabricate too. Junctionless transistor is a heavily doped semiconductor device which has gate electrode which is the controlling terminal [1]. Operation of junctionless transistor relies on the fully depletion of the semiconductor using the work function of the gate material to turn the device off [1]. If the number of gates is increased in a transistor device, it will provide the better control of the flow of current in the channel of the device. For the comparison of devices, various simulations were carried out using TCAD software.

Keywords

Junctionless transistor (JLT) Double-gate junctionless transistor (DGJLT) Trigate junctionless transistor (TGJLT) Work function Channel length Drain-induced barrier lowering (DIBL) 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Deepti Singh
    • 1
  • Renu Vig
    • 1
  • Charu Madhu
    • 1
  • Ravneet Kaur
    • 1
  1. 1.University Institute of Engineering and Technology, Panjab UniversityChandigarhIndia

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