Design of a Piezoresistive Microaccelerometer with High Sensitivity for Medical Diagnostic

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Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 442)

Abstract

The design of a piezoresistive microaccelerometer and its performance analysis have been presented in this paper. The objective is to design a tremor diagnostic system operating at frequency range from 0.1 to 25 Hz and ±2 g. In this paper, mainly the analysis has been done based on the temperature effect, drift, and doping. The microaccelerometer designed has been simulated using the finite element method-based software COMSOL 4.3 with the following dimensions; proof mass: 3200 × 3200 × 250, flexure: 1000 × 250 × 20, frame: 5200 × 230 × 250, piezoresistor: 100 × 25 × 2 (all dimensions are in μm). Here basically, the impact of strain on the temperature and doping has been studied. Sensitivity is dependent upon the piezoresistive coefficient; therefore, the temperature and the doping concentration have a direct impact upon the sensitivity of the device. The designed microaccelerometer has a sensitivity of 10.5 mV/V/g, and Wheatstone bridge is employed as the signal pickup circuit to reduce the cross-axis sensitivity.

Keywords

Microaccelerometer Proof-mass Piezoresistive Wheatstone bridge 
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References

  1. 1.
    Kanda, Y.: Piezoresistance effect of silicon. Sens. Actuators A28, 83–91 (1991)CrossRefGoogle Scholar
  2. 2.
    Keyes, R.W.: The effect of elastic deformation on the electrical conductivity of semiconductors. In: Seitz, F., Turnbull, D. (eds.) Solid State Physics, vol. 11, pp. 149–221. Academic Press, New York (1960)Google Scholar
  3. 3.
    Liu, C.: Foundation of MEMS, pp. 207–244. Pearson (2011)Google Scholar
  4. 4.
    Kal, S., Das, S., Maurya, D.K., Biswas, K., Ravi Sankar, A., Lahiri, S.K.: CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity. J. Microelectron. 37, 22–30 (2006)CrossRefGoogle Scholar
  5. 5.
    Otmani, R., Benmoussa, N., Benyoucef, B.: The thermal drift characteristics of piezoresistive pressure sensor. Phys. Procedia 21, 47–52 (2011)CrossRefGoogle Scholar
  6. 6.
    Biswas, S., Gogoi, A.K.: Design and simulation of piezoresistive MEMS accelerometer for the detection of pathological tremor. In: Proceeding of IEEE SoutheastCON, pp. 1–5. Lexington, KY, Mar 2014Google Scholar
  7. 7.
    Biswas, S., Gogoi, A.K.: Design and analysis of FEM based MEMS accelerometer for detection of postural tremor in thyrotoxicosis. In: Proceeding of International Conference on Advanced Electronics System (ICAES), IEEE Computer Society, pp. 113–116 Sept (2013)Google Scholar
  8. 8.
    Biswas, S., Gogoi, A.K.: Design issues of piezoresistive MEMS accelerometer for an application specific medical diagnostic system. J. IETE Tech. Rev. 33(1), 11–16 (2016)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Department of Electronics and Electrical EngineeringIndian Institute of Technology GuwahatiGuwahatiIndia

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