Abstract
Effect of strong photo excitation on the elastic constant (EC) in extremely degenerate Nano-Wires (NW) forming Gaussian band tails has been investigated by deriving a fundamental carrier statistics formula using NWs of Heavily Doped (HD) n-InSb, n-InAs, Hg1−xCdxTe and In1−xGaxAsyP1−y y lattice matched to InP as examples. We observe that ΔC44 becomes invariant of the film thickness under the condition of relatively low values of the quantum thickness, indicating a very sharp fall at a particular value of the nano thickness manifesting the quantum size effect, in EC. The EC increases with decreasing light intensity, wavelength and alloy composition where the rate of change depends on the values of the band constants respectively. The EC can be experimentally determined by using the corresponding the experimental values of the thermo electric power.
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Acknowledgements
The authors are grateful to Prof. Dr. S. Chakrabarti, Director, Institute of Engineering and Management, Kolkata for inspiration and helpful discussion in the real sense of the term.
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Paul, R., Ghatak, S., Das, S., Mitra, M., Datta, T., Ghatak, K.P. (2017). Can Photons Affect the Elastic Constants in Heavily Doped Nano Wires?. In: Bhattacharya, I., Chakrabarti, S., Reehal, H., Lakshminarayanan, V. (eds) Advances in Optical Science and Engineering. Springer Proceedings in Physics, vol 194. Springer, Singapore. https://doi.org/10.1007/978-981-10-3908-9_11
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DOI: https://doi.org/10.1007/978-981-10-3908-9_11
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