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Epitaxial Growth of GaN on Patterned Sapphire Substrates

  • Kazuyuki TadatomoEmail author
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 133)

Abstract

This chapter describes the Patterned Sapphire Substrate (PSS). First, the properties and the fabrication process of the PSS are described. Then, the mechanism to decrease the dislocation density in the crystal growth of GaN layer on the PSS is elaborated. Third, the principle of the improvement in the LEE of the GaN-LEDs fabricated on the PSS is explained. Finally, the novel application of the PSS to grow nonpolar and semipolar GaN layers is introduced.

Keywords

Internal Quantum Efficiency Thread Dislocation Density Hydride Vapor Phase Epitaxy Epitaxial Lateral Overgrowth Light Extraction Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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© Springer Nature Singapore Pte Ltd. 2017

Authors and Affiliations

  1. 1.Graduate School of Science and EngineeringYamaguchi UniversityUbe, YamaguchiJapan

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