JFETs and MESFETs — Field Effect Transistors

  • A. G. Milnes
Chapter

Abstract

For their function junction field effect transistors (JFETs) depend on reverse-biased junction depletion regions that control majority carrier conduction in thin channels between ohmic contacts to source and drain regions. The structures require fewer masking steps and fewer diffusions than bipolar transistors and may be made either n channel or p channel. The contact through which the majority carriers enter the channel is termed the source S, and the exit is the drain D. The circuit symbol and some characteristics for an n channel FET are shown in Fig. 6.1. A MESFET is similar except that the junction is a metal-semiconductor barrier. MOSFETs (metal-oxide-semiconductor FETs) are considered in Chap. 7.

Keywords

Field Effect Transistor Noise Figure Bipolar Transistor Microwave Theory Conversion Gain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© A. G. Milnes 1980

Authors and Affiliations

  • A. G. Milnes
    • 1
  1. 1.Carnegie-Mellon UniversityPittsburghUSA

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