Tenth E.C. Photovoltaic Solar Energy Conference pp 184-187 | Cite as
A Model for the Direct Bias C-V Measurements on a-Si:H p-i-n Solar Cells
Conference paper
Abstract
In this paper we present a new analytical model for the direct bias capacitance in p-i-n amorphous silicon solar cells. The model includes the contributions due to band tails and dangling bonds trap states in the diffusion capacitance.
Experimental measurements of capacitance versus direct bias voltage are presented, showing a very good agreement with theoretical predictions.
The presented model, requires a very short computer time, being based on the analytical treatment of the p-i-n structure; this allows an easy comparison with experimental measurements.
Keywords
Trap State Deep Level Transient Spectroscopy Trap Charge Direct Bias Band Tail
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© Springer Science+Business Media Dordrecht 1991