Slicing, Cleaning and Etching thin 30×30cm wafers of Multicristalline Silicon

  • P. P. Lievens
  • T. de Villers Grandchamps
  • E. A. Smekens
  • G. R. Smekens
Conference paper

Abstract

In March 1991 a very first slicing test was performed by a very large size wire saw on a multicristalline silicon ingot having a 30×30cm cross section. The purpose of the test was to establish whether good surface finish and acceptable total thickness variations was obtainable on 180 microns thick wafers with a wire penetration over a continuous length of 30cm of material and over a continuous depth of 30 cm neither of both operating conditions having ever been done before.

Keywords

Ultrasonic Cleaning Good Surface Finish Photo Voltaic Silicon Ingot Excessive Viscosity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. (1).
    E.N.E. 9th EC-PVSEC. Late New (Freiburg, 1989)Google Scholar
  2. (2).
    K. Shirasawa, 21st IEEE PVSC (Kyoto, 1990)Google Scholar
  3. (3).
    Kyocera Corp, 5th Int’l, PVSEC (Kyoto, 1990)Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1991

Authors and Affiliations

  • P. P. Lievens
    • 1
  • T. de Villers Grandchamps
    • 1
  • E. A. Smekens
    • 1
  • G. R. Smekens
    • 1
  1. 1.E.N.E. (Energies Nouvelles et Environnement)BrusselsBelgium

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