Metal-Enhanced Growth of Silicon

  • Frans Spaepen
  • Eric Nygren
  • Andrew V. Wagner
Chapter
Part of the NATO ASI Series book series (NSSE, volume 222)

Abstract

A kinetic analysis is made of the growth velocities of a variety of phenomena involving the growth of silicon: solid phase epitaxy, melting and solidification, vapor-liquid-solid growth, solid-liquid-solid growth, thermomigration of liquid metal droplets, and metal-mediated crystallization in the solid state. In a few cases the maxi mum interface-limited growth rate could be determined; in most cases only lower limits could be established. In all cases the proximity of a metallic phase to the interface enhanced the maximum interface-limited growth rate by several orders of magnitude over the solid phase epitaxial growth rate at the same temperature.

Keywords

Amorphous Phase Growth Velocity Liquid Alloy Metallic Phase Droplet Velocity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  • Frans Spaepen
    • 1
  • Eric Nygren
    • 2
  • Andrew V. Wagner
    • 1
  1. 1.Division of Applied SciencesHarvard UniversityCambridgeUSA
  2. 2.Department of Materials Science and EngineeringOhio State UniversityColumbusUSA

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