Diffusion in Cobalt Silicide During Silicide Formation
Chapter
Abstract
The dominant moving species and the mobility of silicon during Co2Si and CoSi formation has been examined using a combination of radioactive 31Si tracers and metal markers. It was found that cobalt was essentially the only diffusing species during first phase formation and that virtually no self-diffusion of silicon took place. During CoSi formation silicon was found to be much more mobile indicating second phase growth by silicon substitutional diffusion. Metal marker results confirm that silicon is the dominant diffusing species during second phase growth. It is proposed that the observed results are only consistent with silicon vacancy diffusion during CoSi formation.
Keywords
Random Motion Growth Flux Vacancy Mechanism Silicide Formation Tracer Result
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Preview
Unable to display preview. Download preview PDF.
References
- 1.Lau, S.S., Mayer, J.W. and Tu, K.N. (1978) ‘Interactions in the Co/Si thin-film system. I. Kinetics’, J. Appl. Phys. 49, 4005–4010.CrossRefGoogle Scholar
- 2.d’Heurle, F.M. and Pettersson, C.S. (1985) ‘Formation of thin films of CoSi2: Nucleation ans diffusion mechanisms’, Thin Solid Films 128, 283–297.CrossRefGoogle Scholar
- 3.Lien, C.-D., Nicolet, M-A., Pai, C.S. and Lau, S.S. (1985) ‘Growth of Co-silicides from single crystal and evaporated Si’, Appl. Phys. A36, 153–157.Google Scholar
- 4.van Gurp, G.J., van der Weg, W.F. and Sigurd, D. (1978) ‘Interactions in the Co/Si thin film system. II. Diffusion-marker experiments’, J. Appl. Phys. 49, 4011–4020.CrossRefGoogle Scholar
- 5.Lim, B.S., Ma, E., Nicolet, M-A. and Natan, M. (1987) ‘Kinetics and moving species during Co2Si formation by rapid thermal annealing’, J. Appl. Phys. 61, 5027–5030.CrossRefGoogle Scholar
- 6.Botha, A.P., Pretorius, R. and Kritzinger, S. (1986) ‘Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides’, Thin Solid Films 141, 41–51.CrossRefGoogle Scholar
- 7.Lien, C.-D. (1985) ‘Profile of tracer Si in silicide when Si diffuses by vacancy mechanism’, J. Appl. Phys. 57, 4554–4559.CrossRefGoogle Scholar
- 8.Using model discribed in: McLeod, J.E., Wandt, M.A.E., Pretorius, P. and Comrie, C.M. ‘Marker and radioactive tracer studies of PtSi formation’, to be submitted to J. Appl. Phys.Google Scholar
Copyright information
© Springer Science+Business Media Dordrecht 1992