Materials aspects and implementation of silicides for ULSI

  • Karen Maex
Chapter
Part of the NATO ASI Series book series (NSSE, volume 222)

Abstract

Silicides have been a topic of intensive research for more than a decade. Driving force for these investigations has been certainly the interesting materials aspects of the silicides and the possibility of their application in integrated circuits. An extensive review of the materials properties of silicides is given in ref.1. The most interesting group of silicides in view of this paper are the transition metal silicides. Experiments have been performed to understand the silicidation reaction, its stability with respect to dopants, chemical ambient and temperature, and to conceive kinetic and thermodynamic characteristics. The resulting fundamental understanding has been crucial for implementation of silicides in integrated circuits.

Keywords

Sheet Resistance Leakage Current Density Rapid Thermal Processing Junction Depth Specific Contact Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media Dordrecht 1992

Authors and Affiliations

  • Karen Maex
    • 1
  1. 1.Interuniversity Microelectronics Center (IMEC v.z.w.)LeavenBelgium

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