Optical Properties of Imperfecṫ Si-Ge Heterostructures
Chapter
Abstract
We compare the strength of optical spectra in ordered ultrathin period superlattices with those of strained (perfect and imperfect) SiGe alloys and find that the former should be significantly stronger irrespective of the degree of disorder. Our calculations also show that some of the novel features in the optical spectra of Si-Ge quantum well structures reported in recent literature can be explained by electron localisation at small interface islands
Keywords
Optical Spectrum Impurity State Conduction Band Minimum Zero Phonon Line Phonon Line
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© Springer Science+Business Media Dordrecht 1993