Indentation of Semiconductor Superlattices

  • M. R. Castell
  • A. Howie
  • D. D. Perovic
  • A. J. Whitehead
  • D. Ritchie
  • A. Churchill
  • G. A. C. Jones
Chapter
Part of the NATO ASI Series book series (NSSE, volume 233)

Abstract

A study is presented of low load indentations made into GaAs/AlAs superlattices and Si/SixGe1−x strained layer superlattices. We have studied the indentation sites using high resolution scanning electron microscopy (SEM) which allows us to distinguish between the individual layers due to the differences in the secondary electron (SE) yields of the materials. Transverse cleavage through the indentation sites reveals the pattern of the deformed multilayers, showing in particular a region of compressive strains of up to 30%.

Keywords

Secondary Electron Secondary Electron Image High Resolution Scanning Electron Microscopy Indentation Site Semiconductor SUPERLATTICES 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media Dordrecht 1993

Authors and Affiliations

  • M. R. Castell
    • 1
  • A. Howie
    • 1
  • D. D. Perovic
    • 2
  • A. J. Whitehead
    • 3
  • D. Ritchie
    • 1
  • A. Churchill
    • 1
  • G. A. C. Jones
    • 1
  1. 1.Cavendish LaboratoryCambridgeUK
  2. 2.Department of Materials ScienceUniversity of TorontoTorontoCanada
  3. 3.Materials DivisionThe UniversityNewcastle upon TyneUK

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