Quantum Dynamics of Submicron Structures pp 21-29 | Cite as
Anderson Transition in Homogeneous and Random Magnetic Fields
Abstract
Results of extensive numerical studies of localisation in three—dimensional disordered systems including the influence of a strong magnetic field, in addition to a random potential, are reported. The magnetic field is incorporated via Peierls phase factors. In addition to the limit of a homogeneous magnetic field, models with random Peierls phases with and without a scalar random potential are considered. The critical behavior at the disorder—induced metal—insulator transition is investigated. It is shown that a universal one—parameter scaling law governs the critical behavior of those models that contain a random scalar potential. If only randomness in the Peierls phases is present, a different scaling behavior is observed. The critical exponent for the former case is determined to be v = 1.35 ± 0.15, whereas in the latter v = 1.0 ± 0.2 is extracted from the data.
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