Application of High Temperature—Pressure Treatment for Investigation of Defect Creation in Basic. Materials of Modern Microelectronics: Czochralski Silicon and Silicon Containing Films

  • A. Misiuk
Chapter
Part of the NATO Science Series book series (NAII, volume 48)

Abstract

Effect of enhanced hydrostatic pressure (HP, up to 1 6 GPa) applied at up to 1620 K (HT—HP treatment) on the creation of defects and on electrical, photoluminescence and other properties of bulk Czochralski silicon, Cz-S1, on S1 implanted with H, He and O and on S1 — containing films, such as S1O2, S1O2 (S1,Ge), S1(O,N), is discussed The HT — HP treatment results m enhanced creation of thermal donors, new donors and of oxygen precipitates in Cz-S1 as well as in visible photoluminescence from SiO2, SiO2 (S1,Ge) and S1(O,N) films, while creation of dislocations in Cz-S1 and S1 O is suppressed Many of these HT—HP induced effects deserve further investigation, among them revealing the nature of HP—induced thermal donors, structural transformations in S1 O and optical activity of the HT—HP treated films containing S1 nanocrystals

Key words

Czochralski silicon silicon containing films high temperature—pressure HT—HP induced defects 
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Copyright information

© Springer Science+Business Media Dordrecht 2001

Authors and Affiliations

  • A. Misiuk
    • 1
  1. 1.Institute of Electron TechnologyWarsawPoland

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