Numerical Studies of Semiconductor Quantum Structures

  • F. Boxberg
Chapter
Part of the NATO Science Series book series (NAII, volume 90)

Abstract

We have simulated the effect of strain and external fields on the electronic and optical properties of low-dimensional semiconductor structures. We have studied strain-induced quantum dots (QDs), InAs QDs, and self-organized quantum wires (QWR). The strain distribution was calculated using finite element method and elastic continuum approximation, including piezoelectric coupling. Our latest project is to calculate the band structure of the studied structures, using a 8-coupled-band model, based on the kdot-p theory. With these calculations we intend to study the conductivity and the optical gain of QWRs and QDs.

Keywords

Laser Fluence Peak Wavelength Femtosecond Laser Pulse Irradiation Defect Late Project 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • F. Boxberg
    • 1
  1. 1.Helsinki University of TechnologyFinland

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