Seventh E.C. Photovoltaic Solar Energy Conference pp 435-440 | Cite as
High Efficiency a-Si:H Solar Cells: Stability and Structure as a Function of Growth Rate
Abstract
PIN amorphous silicon solar cells were investigated as a function of I-layer deposition rate. Films were prepared by the D.C. glow discharge of silane. Solar cells prepared at deposition rates of 10Å/sec achieved AMI.5 conversion efficiencies of 9.36% without an increase in light induced degradation compared to devices prepared at lower deposition rates. Cells prepared at deposition rates higher than 10Å/sec show both significantly lower initial performance, as well as, greater rates of light induced degradation. Examination of the structure by FTIR reveals the enhanced degradation is correlated with absorption at 845cm−1. This absorption is typically associated with (SiH2)n polymeric (bending) modes. SIMS analysis shows no significant changes with deposition rate.
Keywords
Solar Cell Deposition Rate Glow Discharge Fill Factor Growth Rate CellPreview
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