Semiconductor Device Reliability pp 439-453 | Cite as
Investigation into Molecular Beam Epitaxy-Grown FETs and HEMTs
Abstract
An investigation into molecular beam epitaxy-grown FETs and HEMTs has been carried-out. Reliability life-tests have been driven on both AlGaAs/GaAs conventional and AlAs/GaAs superlattice HEMTs. Power MESFETs including an AlGaAs undoped buffer layer for electron confinement in the channel have been also studied. For all these devices the influence of laser desorption during the MBE growth process has been assessed in terms of performance improvements and stability of FET structures. Moreover, the main parasitic effects penalizing this large scale integration of HEMT-based ICs have been experimentally characterized and investigated together with the related modelling.
Keywords
Buffer Layer High Electron Mobility Transistor GaAs Buffer Layer Buffer Layer Thickness Kink EffectPreview
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References
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