Reactive Ion Beam Etching Studies of Tungsten with CF4 Using Ion Scattering Spectroscopy
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Abstract
Reactive ion beam etching (RIBE) offers intrinsic interest as an etch technique and its comparatively low operating pressure (10-4 torr in the bombardment chamber) allows the application of ion beam based surface analytical techniques to monitor the surface during etching. We report here on the RIBE of tungsten with a reactive ion beam generated from a carbon tetrafluoride (CF4)/argon (Ar) gas mixture.
Keywords
Tungsten Surface Outermost Surface Layer Hemispherical Energy Analyser Carbon Tetrafluoride Bombardment Chamber
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© Kluwer Academic Publishers 1990