Electron Spin Resonance in the Domain of the Fractional Quantum Hall Effect
Abstract
The fractional quantum Hall effect (FQHE) can only be explained in a framework including electron—electron interactions. While the FQHE at v = 1/3 is treated in terms of electrons in the lowest Landau level and in a single spin state, for e.g. v = 2/3 an unpolarized ground state can be formed from wave functions with both spin orientations [1]. This was considered to be responsible for the dependence of the transport data on the tilt angle of the magnetic field [2]. A strong reduction of the spin polarization was also observed for filling factors close to one and attributed to the formation of a Skyrmion spin texture [3]. A reduction in polarization is expected to manifest itself in a reduction of the strength of the electron spin resonance (ESR).
Keywords
Electron Spin Resonance Filling Factor Electron Spin Resonance Signal Lower Landau Level Fractional Quantum Hall EffectPreview
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