In-Situ Processing Combining MBE, Lithography and Ion Implantation

  • H. Ahmed
Chapter
Part of the NATO ASI Series book series (NSSE, volume 139)

Abstract

The current interest in the physics of low dimensionality has required a re-examination of the techniques for microfabrication developed originally for the fabrication of semiconductor integrated circuits. The new requirements place great emphasis on the growth of layers of high purity, crystalline perfection within the layer, a very small degree of crystalline mismatch between layers and controlled and predictable surface properties. Additionally, stringent requirements have been placed on layer thickness, layer composition and electrical, optical and mechanical properties. At present the only viable means for producing such layers is molecular beam epitaxy (MBE).

Keywords

Molecular Beam Epitaxy Layer Growth Molecular Beam Epitaxy System Registration Mark Layer Growth Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Martinus Nijhoff Publishers 1988

Authors and Affiliations

  • H. Ahmed
    • 1
  1. 1.Microelectronics Research Group, Department of PhysicsCambridge UniversityCambridgeUSA

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