Wafer and Epilayer Improvement Correlated with Device Performances for Inp Based Optoelectronics
The project described in this paper is aimed to develop a reproducible technology for the preparation of InP substrates and epitaxial layers based on this material. This development is supported by extensive material characterization and the feed back from device manufacturing.
KeywordsEpitaxial Layer Metal Organic Vapor Phase Epitaxy Quaternary Layer Race Project Bandgap Wavelength
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