Recent Developments in the Epitaxial Growth of Transition Metal Silicides on Silicon

  • L. J. Chen
  • J. J. Chu
  • W. Lur
  • H. F. Hsu
  • T. C. Lee
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

Recently a number of silicides were grown epitaxially on silicon. It now appears that almost all transition metal silicides can be grown epitaxially on silicon. 1–6 Previous studies on the epitaxial growth of silicides on silicon were mostly on the growth of silicides on large area, undoped samples. Furnace annealings were usually performed to grow epitaxial silicides. 2–4 However, in device applications, silicides were often grown on laterally confined, ion implanted silicon. 2,7 In order to minimize dopant redistribution for shallow junction devices, rapid thermal annealing (RTA) has been increasingly used to activate the dopant and form the silicides. 8 In an effort to realize the practical applications of epitaxial silicides in microelectronics devices, the effects of lateral confinement, dopants, and rapid thermal annealing on the growth of epitaxial silicides on silicon have been investigated.

Keywords

Epitaxial Growth Rapid Thermal Annealing Nickel Film Oxide Opening Silicide Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • L. J. Chen
    • 1
  • J. J. Chu
    • 1
  • W. Lur
    • 1
  • H. F. Hsu
    • 1
  • T. C. Lee
    • 1
  1. 1.Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchuTaiwan, Republic of China

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