ESPRIT ’90 pp 105-116 | Cite as

Low Temperature Ion-Assisted Epitaxy of Deposited Silicon Layers

  • F. Priolo
  • C. Spinella
  • E. Rimini
Conference paper

Abstract

The low temperature epitaxial crystallization of chemical vapor deposited silicon layers obtained by means of high energy ion irradiation is studied. Both the kinetics of the process and the morphology of the regrown layers are characterized. This novel procedure, in view of the small thermal budgets involved, can result interesting for possible application to the bipolar technology.

Keywords

Cross Sectional Transmission Electron Microscopy Nuclear Reaction Analysis Interfacial Oxygen Surface Amorphous Layer Epitaxial Regrowth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1990

Authors and Affiliations

  • F. Priolo
    • 1
  • C. Spinella
    • 1
  • E. Rimini
    • 1
  1. 1.Dipartimento di FisicaUniversita di CataniaCataniaItaly

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