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Optoelectronic Characterization of Epitaxial Films of Electrodeposited CdSe Quantum Dots

  • B. Alperson
  • S. Cohen
  • Y. Golan
  • I. Rubinstein
  • G. Hodes
Part of the NATO ASI Series book series (ASHT, volume 12)

Abstract

Optical and electrical properties of films of CdSe quantum dots epitaxially electrodeposited onto gold have been measured by modulated optical spectroscopy, liquid junction photoresponse spectroscopy and local current-voltage spectroscopy using a metallized scanning probe tip. The blue shift in the bandgap resulting from quantum confinement in the quantum dots has been measured by all these techniques. Large differences in the charge collection efficiency between the first and subsequent layers of dots have been measured and explained by the positive role of grain boundaries in enhancing collection efficiency in these films. Single electron transfer through the dots has been observed and explained by the large charging energies of the very small (4–5nm) dots.

Keywords

Conduction Level Crystal Boundary Charge Collection Efficiency CdSe Film Coulomb Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • B. Alperson
    • 1
  • S. Cohen
    • 1
  • Y. Golan
    • 1
  • I. Rubinstein
    • 1
  • G. Hodes
    • 1
  1. 1.Weizmann Institute of ScienceRehovotIsrael

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