Nano-Ferroelectrics

  • J. F. Scott
Conference paper
Part of the NATO Science Series book series (NAII, volume 128)

Abstract

Beginning in the 1950s every large US microelectronics company (Bell Labs, IBM, Ford, RCA, etc.) was involved in ferroelectrics research. The main driving force was the idea that the +P polarization state and the −P polarization state of a ferroelectric could be used to encode the “1” and “0” of the Boolean algebra in which modern digital computers operate. At that time, however, ferroelectrics were available only as single crystals or rather thick ceramics. Since a typical coercive field for switching a ferroelectric from +P to −P (or vice versa) is ca. 40 kV/cm, a 1 mm thick device would have an operating voltage of 4000 Volts! Moreover, the devices were expensive. Therefore as silicon DRAM (dynamic random access memories) devices developed rapidly, ferroelectric RAMs were left on the back-burner as objects of mere academic novelty. This changed rapidly through the 1980s as oxide films as thin as 20 nm were fabricated in pinhole-free 6” commercial wafer form. At that point the advantages of ferroelectric memories over Si DRAMs was recognized once again: They are non-volatile (the memory does not need refreshing, like DRAMs, and does not forget if power is interrupted); they are radiation hard, no single event upset — SEU; and they are lighter in weight than Core magnetic memories, and 1000x faster to erase and rewrite than are EEPROMs — electrically erasable programmable read-only memories).

Keywords

Dynamic Random Access Memory Bismuth Titanate Confinement Energy Sense Amplifier Ferroelectric Memory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2003

Authors and Affiliations

  • J. F. Scott
    • 1
  1. 1.Symetrix Centre for Ferroics, Earth Sciences DepartmentCambridge UniversityUK

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