Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs

Conference paper
First Online:
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Abstract

The aluminium-gallium-indium-antimonide (Al x Ga y In\({}_{1-x-y}\)Sb) material system offers great promise for efficient laser diode operation across the 3 to 5 μm wavelength range. It offers an excellent compromise between the requirements for good electronic and optical confinement and those for low series resistance. In addition, the use of an active region comprising compressively strained Type-I quantum wells (QWs) is predicted to lead to increased gain, which leads to lower threshold current densities and hence reduced non-radiative Auger recombination. In this paper a review of recent progress in the development of this material system is given, including the demonstration of multi-quantum well samples exhibiting photoluminescence up to room temperature, and laser diodes operating up to 219 K.

Keywords

Auger Recombination Threshold Current Density Interband Cascade Laser Continuous Wave Power Lower Threshold Current Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgements

The author would like to acknowledge the work of T. Ashley, L. Buckle, S. D. Coomber, M. T. Emeny, H. Forman, A. Keir, S. J. Smith, C. J. Storey, and G. M. Williams from QinetiQ in Malvern, S. J. B. Przeslak (University of Bristol), P. J. Carrington, A. Krier, and M. Yin (Lancaster University), G. de Valicourt (now at Alcatel-Thales III-V Laboratory), and A. D. Andreev (University of Surrey).

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Copyright information

© Springer Science+Business Media B.V. 2011

Authors and Affiliations

  1. 1.QinetiQ, Malvern Technology CentreMalvernUK

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