Parasitic effects and verify circuits

Chapter

Abstract

As anticipated in the introduction to Chap. 8, the current–voltage (I/V) characteristic 5 of the cell is influenced by the data being programmed afterwards in the other 6 cells. In order to avoid the source degeneration effect (load variation between cell 7 source terminal and SL), the cells of a string are sequentially programmed starting 8 from the source-side cell all the way to the bitline-side cell. For instance (Fig. 9.1), 9 cell M0 is programmed first, followed by M1, M2 and so on. The drain-side load 10 variation has a “modulation” effect on the I/V characteristic of the cell in terms of 11 both reduction of the saturation current ISSAT and variation of the slope (Fig. 8.3). 12 Such a modulation effect is known as Background Pattern Dependency (BPD). 13 The physical threshold voltage of M0, VTH, obviously does not change (neglecting 14 the floating gate coupling effect M1 - M0).

Keywords

Threshold Voltage Gate Voltage Source Line Threshold Current Read Operation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  1. 1.Forward InsightsNorth YorkCanada
  2. 2.Integrated Device TechnologyAgrate BrianzaItaly

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