Measurement Results for the Frequency-Tunable CMOS RF Power Amplifier

Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

The experimental characterization and measurement of the frequency-tunable RF power amplifier is the subject of this chapter. The frequency-tunable behavior could not be observed in the characterization of the integrated circuit at 3.7 and 5.2 GHz because of the low coupling factor of the integrated coupled inductors. A hybrid implementation using an integrated stand-alone CMOS power amplifier designed for test purposes, a discrete commercial RF transformer, and a discrete bipolar transistor to control the current in the secondary winding of the transformer was carried out. The circuit was designed for operation at 200 and 300 MHz. The measurements have shown that at 200 MHz a relative improvement in efficiency of a factor of 1.4 was achieved. Moreover, less distortion was generated with the proposed tunable output matching network. The hybrid implementation allowed us to demonstrate the feasibility of the frequency-tunable RF power amplifier based on coupled inductors.

Keywords

Coupling Factor Control Circuit Hybrid Implementation Require Output Power Output Match Network 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Agilent (1999) 8719D Network Analyzers. Agilent Technologies, USA. URL http://cp.literature.agilent.com/litweb/pdf/08720-90288.pdf
  2. 2.
    Agilent (2007) 85052D 3.5 mm economy calibration kit. User’s and Service Guide. URL http://cp.literature.agilent.com/litweb/pdf/85052-90079.pdf
  3. 3.
    Agilent (2010) IC-CAP modeling handbook. URL http://edocs.soco.agilent.com/display/iccapmhb/Home
  4. 4.
    Blalack T, Leclercq Y, Yue CP (2002) On-chip RF isolation techniques. In: Proc IEEE Bipolar/BiCMOS Circuits Technol Meet (BCTM’02), Monterey, CA, pp 205–211 Google Scholar
  5. 5.
    Coilcraft (2006) Surface mount wideband RF transformers. Data Sheet 117-1. URL http://www.coilcraft.com/pdfs/smwbt.pdf
  6. 6.
    Gan H (2006) On-chip transformer modeling, characterization, and applications in power and low noise amplifiers. PhD thesis, Stanford University, Stanford, CA Google Scholar
  7. 7.
    Infineon (2007) BFP405 NPN silicon RF transistor. Data Sheet. URL http://www.infineon.com
  8. 8.
    Lee TH (1998) The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge University Press, Cambridge Google Scholar
  9. 9.
    Long JR (2000) Monolithic transformers for silicon RF IC design. IEEE J Solid-State Circ 35(9):1368–1382 CrossRefGoogle Scholar
  10. 10.
    Long JR (2004) Packaging RF circuits. Lecture Notes for Advanced Engineering Course on RF IC Design, Lausanne, Switzerland Google Scholar
  11. 11.
    Mohan SS (1999) The design, modeling and optimization of on-chip inductor and transformer circuits. PhD thesis, Stanford University, Stanford. URL http://smirc.stanford.edu/papers/Thesis-mohan.pdf
  12. 12.
    Niknejad AM, Meyer RG (1998) Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs. IEEE J Solid-State Circ 33(10):1470–1481 CrossRefGoogle Scholar
  13. 13.
    Pozar DM (1998) Microwave Engineering, 2nd edn. Wiley, New York Google Scholar
  14. 14.
    Rogers (2006) RO4000 Series High Frequency Circuit Materials. Data Sheet 92-004. URL http://www.rogerscorp.com/acm/literature.aspx
  15. 15.
    SUSS (2003) PMC150–Manual cryo prober. Data Sheet. URL http://www.suss.com

Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  1. 1.École Polytechnique Fédérale de Lausanne (EPFL)LausanneSwitzerland

Personalised recommendations