Multi-Gate MOSFET Compact Model BSIM-MG

  • Darsen Lu
  • Chung-Hsun Lin
  • Ali Niknejad
  • Chenming Hu

Abstract

As the scaling of conventional planar CMOS is reaching its limits, multiple-gate CMOS structures will likely take up the baton. To facilitate circuit simulation in such advanced technologies, we have developed BSIM-MG: a versatile compact model for multi-gate MOSFETs. In this chapter separate formulations for common multi-gate and independent multi-gate MOSFETs are presented. The core I-V and C-V models are derived and agree well with TCAD simulations without using fitting parameters, reflecting the predictivity and scalability of the model. Physical effects such as volume inversion, short channel effects and quantum mechanical effects are included in the model. We verify BSIM-MG against triple-gate SOI FinFET experimental data. The model fits data very well across a wide range of biases, gate lengths and temperatures. It is also computationally efficient and suitable for simulating large circuits. Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.

Keywords

SRAM Cell Short Channel Effect Equivalent Oxide Thickness Static Noise Margin TCAD Simulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

We would like to express our sincere appreciation to Dr. Mohan Dunga for his pioneering development of BSIM-IMG and BSIM-CMG. We would also like to thank Dr. Weize Xiong and Dr. Rinn Cleavelin at Texas Instrument, Dr. Paul Patruno at SOITEC, Dr. Jiunn-Ren Hwang and Dr. Fu-Liang Yang at Taiwan Semiconductor Manufacturing Corporation for generously sharing their measured FinFET data. The work presented in this chapter would not have been possible without the funding support by Semiconductor Research Corporation (Task ID: 1451.001) and IMPACT, UC Discovery, and its industrial sponsors.

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Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  • Darsen Lu
    • 1
  • Chung-Hsun Lin
    • 2
  • Ali Niknejad
    • 1
  • Chenming Hu
    • 1
  1. 1.EECSUniversity of CaliforniaBerkeleyUSA
  2. 2.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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