Spintronics pp 331-342 | Cite as

Transport Properties of Co2(Mn, Fe)Si Thin Films

  • Horst Schneider
  • Enrique Vilanova Vidal
  • Gerhard Jakob

Abstract

Thin Heusler films with the composition Co2Mn1−xFexSi were grown by both sputter and pulsed laser deposition. The samples show a high degree of structural order and very good magnetic properties. The availability of thin film samples on dielectric substrates allowed the systematic investigation of their electronic properties by transport experiments. The normal Hall effect shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in agreement with calculations, which predict that the substitution of Mn by Fe leads to a band filling and a shift of the Fermi energy. Furthermore, the behavior of the anomalous Hall effect was studied. It is the sum of two opposing mechanisms: an intrinsic contribution, caused by the topology of the Fermi surface and a temperature dependent impurity scattering.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Horst Schneider
    • 1
  • Enrique Vilanova Vidal
    • 1
  • Gerhard Jakob
    • 1
  1. 1.Institut für PhysikJohannes Gutenberg – UniversitätMainzGermany

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