Advances in Superconductivity III pp 929-932 | Cite as
New Substrate PrGaO3 for High-Tc Superconducting YBa2Cu3Ox Epitaxial Film
Conference paper
Abstract
In this letter, a new substrate material, PrGaO3 crystal, for epitaxial films of superconducting YBa2Cu3O x is reported. The lattice mismatch between PrGaO3 and YBa2Cu3O x is 0.02% at deposition temperature of ~700 °C,and the thermal expansion coefficient of PrGaO3 is close to that of YBa2Cu3O x . The YBa2Cu3O x film deposited by the laser ablation method grows epitaxially on PrGaO3 substrate, and surface morphology is much better than that on SrTiO3. Pr inter-diffusion does not provide any crucial problems, and zero-resistance temperature of the as-deposited 500 Å thick film is 90 K.
Key Words
YBa2Cu3Ox substrate, PrGaO3 epitaxial growthPreview
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© Springer-Verlag Tokyo 1991