Dynamic Model

  • Narain Arora
Chapter
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

The MOS transistor DC models developed in the last chapter are applicable when applied voltages do not vary with time. In this chapter we will develop transistor dynamic models which are applicable when the device terminal voltages are varying with time. The variation in the applied voltages, if sufficiently small, results in the small signal model. However, if the variation in the voltages is large, the large signal model results. Both types of models are required for a circuit simulator, as was discussed in Chapter 1.

Keywords

Gate Voltage Strong Inversion Gate Capacitance Weak Inversion Bulk Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer-Verlag/Wien 1993

Authors and Affiliations

  • Narain Arora
    • 1
  1. 1.Digital Equipment CorporationHudsonUSA

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