State-of-Art: High-Frequency EPR, ESE, ENDOR and ODMR in Wide-Band-Gap Semiconductors
Chapter
First Online:
Abstract
Silver halides have unique features in solid state physics because their properties are considered to be of borderline nature between ionic and covalent bonding.
Keywords
Electron Paramagnetic Resonance Electron Paramagnetic Resonance Spectrum Electron Paramagnetic Resonance Signal Electron Paramagnetic Resonance Line ENDOR Spectrum
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
References
- 1.Landau, L.: Electron motion in crystal lattices. Phys. Z. Sowj. Un. 3, 664 (1933)Google Scholar
- 2.Kabler, M.N.: In: Crawford, J.H., Slifkin, L.M. (eds.) Point Defects in Solids. Plenum Press, New York (1972)Google Scholar
- 3.Song, K.S., Williams, R.T.: Self-Trapped Excitons. Springer, Berlin, Heidelberg (1993)CrossRefGoogle Scholar
- 4.Känzig, W.: Electron spin resonance of V1-centers. Phys. Rev. 99, 1890–1891 (1955)ADSCrossRefGoogle Scholar
- 5.Castner, T.G., Känzig, W.: The electronic structure of V-centers. J. Phys. Chem. Solids 3, 178–195 (1957)ADSCrossRefGoogle Scholar
- 6.Gazzinelli, R., Mieher, R.L.: Electron-nuclear double resonance of the self-trapped hole in LiF. Phys. Rev. 175, 395–411 (1968)ADSCrossRefGoogle Scholar
- 7.Höhne, M., Stasiw, M.: Detection of Ag2+ in doped AgCl crystals by ESR. Phys. Status Solidi 25, k55–k57 (1968)ADSCrossRefGoogle Scholar
- 8.Höhne, M., Stasiw, M.: ESR detection of self-trapped holes in AgCl. Phys. Status Solidi 28, 247–253 (1968)CrossRefGoogle Scholar
- 9.Fukui, M., Hayashi, Y., Yoshioka, H.: The ESR study of growth and decay processes of self-trapped holes in AgCl crystals doped with Cu. J. Phys. Soc. Jpn. 34, 1226–1233 (1973)ADSCrossRefGoogle Scholar
- 10.Kanzaki, H.: Photographic Sci. Eng. 24, 219 (1980)Google Scholar
- 11.Hayes, W., Owen, I.B.: EPR of the self-trapped exciton in AgCl. J. Phys. C 9, L69–L71 (1976)ADSCrossRefGoogle Scholar
- 12.Murayama, K., Morigaki, K., Sakuragi, S., Kanzaki, H.: Optically detected ESR of the excited states in silver halides. J. Phys. Soc. Jpn. 41, 1617–1624 (1976)ADSCrossRefGoogle Scholar
- 13.Hayes, W., Owen, I.B., Walker, P.J.: Optically-detected EPR of excitons in AgCl, AgCl: Br and AgBr. J. Phys. C 10, 1751–1759 (1977)ADSCrossRefGoogle Scholar
- 14.Hayes, W., Owen, I.B.: Comparison of effects of X-rays and ultraviolet light in the creation of excitons in AgCl. J. Phys. C 11, L607–L610 (1978)ADSCrossRefGoogle Scholar
- 15.Marchetti, A.P., Tinti, D.S.: Low-temperature photophysics of crystalline AgCl. Phys. Rev. B 24, 7361–7370 (1981)ADSCrossRefGoogle Scholar
- 16.Yoshioka, H., Sugimoto, N., Yamaga, M.: ODMR of self-trapped excitons in AgCl crystals: analysis of polarization and intensity of ODMR. J. Phys. Soc. Jpn. 54, 3990–4004 (1985)ADSCrossRefGoogle Scholar
- 17.Sugimoto, N., Yoshioka, H., Yamaga, M.: Optically detected magnetic resonance of trapped excitons (AgCl6)5- and (AgBrCl5)5- in AgCl crystals. J. Phys. Soc. Jpn. 54, 4331–4339 (1985)ADSCrossRefGoogle Scholar
- 18.Yamaga, M., Sugimoto, N., Yoshioka, H.J.: Dynamic Jahn-Teller effect in the ODMR spectrum of the self-trapped exciton in AgCl crystals. Phys. Soc. Jpn. 54, 4340–4344 (1985)ADSCrossRefGoogle Scholar
- 19.Spoonhower, J.P., Ahlers, F.J., Eachus, R.S., McDugle, W.G.: Recombination photophysics in AgCl. J. Phys.: Condens. Matter 2, 3021–3030 (1990)ADSGoogle Scholar
- 20.Donckers, M.C.J.M., Poluektov, O.G., Schmidt, J., Baranov, P.G.: Exchange splitting of self-trapped excitons in AgCl from optically detected EPR at 95 GHz. Phys. Rev. B 45, 13061–13063 (1992)ADSCrossRefGoogle Scholar
- 21.Poluektov, O.G., Donckers, M.C.J.M., Baranov, P.G., Schmidt, J.: Dynamical properties of the self-trapped exciton in AgCl as studied by time-resolved EPR at 95 GHz. Phys. Rev. B 47, 10226–10234 (1993)ADSCrossRefGoogle Scholar
- 22.Romanov, N.G., Baranov, P.G.: Multiquantum ODMR spectroscopy of semiconductors and silver chloride. Semicond. Sci. Technol. 9, 1080–1085 (1994)ADSCrossRefGoogle Scholar
- 23.Baranov, P.G., Romanov, N.G.: Magnetic resonance in micro- and nanostructures. Appl. Magn. Reson. 21, 165–193 (2001)CrossRefGoogle Scholar
- 24.Bennebroek, M.T., Arnold, A., Poluektov, O.G., Baranov, P.G., Schmidt, J.: Spatial distribution of the wave function of the self-trapped exciton in AgCl. Phys. Rev. B 53, 15607–15616 (1996)ADSCrossRefGoogle Scholar
- 25.Stoneham, A.M.: Theory of Defects in Solids. Clarendon, Oxford (1985)MATHGoogle Scholar
- 26.Bennebroek, M.T., Poluektov, O.G., Zakrzewsky, A.J., Baranov, P.G., Schmidt, J.: Structure of the intrinsic shallow electron center in AgCl studied by pulsed electron nuclear double resonance spectroscopy at 95 GHz. Phys. Rev. Lett. 74, 442–445 (1995)ADSCrossRefGoogle Scholar
- 27.Bennebroek, M.T., Arnold, A., Poluektov, O.G., Baranov, P.G., Schmidt, J.: Shallow electron centers in silver halides. Phys. Rev. B 54, 11276–11289 (1996)ADSCrossRefGoogle Scholar
- 28.Baetzold, R.C., Eachus, R.S.: The possibility of a split interstitial silver ion in AgCl. J. Phys.: Condens. Matter 7, 3991–3999 (1995)ADSGoogle Scholar
- 29.Gourary, B.S., Adrian, F.J.: Approximate wave functions for the F center, and their application to the electron spin resonance problem. Phys. Rev. 105, 1180–1192 (1957)ADSMATHMathSciNetCrossRefGoogle Scholar
- 30.Zhitnikov, R.A., Baranov, P.G., Melnikov, N.I.: Ag2+ molecular ions in a KCl crystal. Phys. Status Solidi (b) 59, K111–K114 (1973)ADSCrossRefGoogle Scholar
- 31.Eachus, R.S., Graves, R.E., Olm, M.T.: Observation by ESR of electrons localized at intrinsic shallow traps in silver halide systems. Phys. Status Solidi (b) 152, 583–592 (1989)ADSCrossRefGoogle Scholar
- 32.Sakuragi, S., Kanzaki, H.: Identification of shallow electron centers in silver halides. Phys. Rev. Lett. 38, 1302–1305 (1977)ADSCrossRefGoogle Scholar
- 33.Bennebroek, M.T., Duijn-Arnold, Av, Schmidt, J., Poluektov, O.G., Baranov, P.G.: Self-trapped hole in silver chloride crystals: a pulsed EPR/ENDOR study at 95 GHz. Phys. Rev. B 66, 054305 (2002)ADSCrossRefGoogle Scholar
- 34.Grachev, V.G.: Correct expression for the generalized spin Hamiltonian for a noncubic paramagnetic center. Sov. Phys. JETP 65, 1029–1035 (1987)Google Scholar
- 35.Moreno, M.: Microscopic characterization of impurities in insulators through EPR. J. Phys. Chem. Solids 51, 835–859 (1990)ADSCrossRefGoogle Scholar
- 36.Valiente, R., Aramburu, J.A., Barriuso, M.T., Moreno, M.: Electronic structure of Ag2+ impurities in halide lattices. J. Phys. C 6, 4515–4525 (1994)Google Scholar
- 37.Feher, G.: Electron spin resonance experiments on donors in silicon. I. Electronic structure of donors by the electron nuclear double resonance technique. Phys. Rev. 114, 1219–1244 (1959)ADSCrossRefGoogle Scholar
- 38.Fletcher, R.C., Yager, W.A., Pearson, G.L., Merritt, F.R.: Hyperfine splitting in spin resonance of group V donors in silicon. Phys. Rev. 95, 844–845 (1954)ADSCrossRefGoogle Scholar
- 39.Ivey, J.L., Mieher, R.L.: Ground-state wave function for shallow-donor electrons in silicon. II. Anisotropic electron-nuclear-double-resonance hyperfine interactions. Phys. Rev. B 11, 849–857 (1975)ADSCrossRefGoogle Scholar
- 40.van Duijn-Arnold, A., Mol, J., Verberk, R., Schmidt, J., Mokhov, E.N., Baranov, P.G.: Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC. Phys. Rev. B 60, 15829–15847 (1999)ADSCrossRefGoogle Scholar
- 41.Choyke, W.J., Patrick, L.: Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption. Phys. Rev. 127, 1868–1877 (1962); Choyke, W.J., Hamilton, D.R., Patrick, L.: Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption. Phys. Rev. 133, A1163–A1166 (1964)Google Scholar
- 42.Colwell, P.J., Klein, M.V.: Raman scattering from electronic excitations in n-Type silicon carbide. Phys. Rev. B 6, 498–515 (1972)ADSCrossRefGoogle Scholar
- 43.Woodbury, H.H., Ludwig, G.W.: Electron spin resonance studies in SiC. Phys. Rev. 124, 1083–1089 (1961)ADSCrossRefGoogle Scholar
- 44.Hardeman, G.E.G., Gerritsen, G.B.: Displacement phenomena of boron acceptors in 6H SiC. Phys. Lett. 20, 623–624 (1966)ADSCrossRefGoogle Scholar
- 45.Patrick, L.: Kohn-Luttinger interference effect and location of the conduction-band Minima in 6H SiC. Phys. Rev. B 5, 2198–2206 (1972)ADSCrossRefGoogle Scholar
- 46.Kalabukhova, E.N., Kabdin, N.N., Lukin, S.N.: Sov. Phys. Solid State 29, 1461–1462 (1987)Google Scholar
- 47.Greulich-Weber, S., Feege, M., Spaeth, J.-M., Kalabukhova, E.N., Lukin, S.N., Mokhov, E.N.: On the microscopic structures of shallow donors in 6H SiC: studies with EPR and ENDOR. Solid State Commun. 93, 393–397 (1995)ADSCrossRefGoogle Scholar
- 48.Greulich-Weber, S.: EPR and ENDOR investigations of shallow impurities in SiC polytypes. Phys. Status Solidi A 162, 95–151 (1997)ADSCrossRefGoogle Scholar
- 49.Kohn, W., Luttinger, J.M.: Theory of donor levels in silicon. Phys. Rev. 97, 1721 (1955)ADSMATHCrossRefGoogle Scholar
- 50.Kohn, W.: Shallow impurity states in silicon and germanium. In: Seitz, F., Turnbull, D. (eds.) Solid State Physics, vol. 5, pp. 257–320. Academic Press Inc., New York (1957)Google Scholar
- 51.van Duijn-Arnold, A., Zondervan, R., Schmidt, J., Baranov, P.G., Mokhov, E.N.: Electronic structure of the N donor centre in 4H-SiC and 6H-SiC. Phys. Rev. B 64, 085206 (2001)ADSCrossRefGoogle Scholar
- 52.Szász, K., Trinh, X.T., Son, N.T., Janzén, E., Gali, A.: Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC. J. Appl. Phys. 115, 073705 (2014)ADSCrossRefGoogle Scholar
- 53.Son, N.T., Janzén, E., Isoya, J., Yamasaki, S.: Hyperfine interaction of the nitrogen donor in 4H-SiC. Phys. Rev. B 70, 193207 (2004)ADSCrossRefGoogle Scholar
- 54.Savchenko, D.V., Kalabukhova, E.N., Kiselev, V.S., Hoentsch, J., Poppl, A.: Spin-coupling and hyperfine interaction of the nitrogen donors in 6H-SiC. Phys. Status Solidi B 246, 1908–1914 (2009)ADSCrossRefGoogle Scholar
- 55.Savchenko, D.V., Kalabukhova, E.N., Poppl, A., Shanina, B.D.: Electronic structure of the nitrogen donors in 6H SiC as studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy. Phys. Status Solidi B 249, 2167–2178 (2012)ADSCrossRefGoogle Scholar
- 56.Baranov, P.G., Ber, B.Ya., Godisov, O.N., Il’in, I.V., Ionov, A.N., Mokhov, E.N., Muzafarova, M.V., Kaliteevskii, A.K., Kaliteevskii, M.A., Kop’ev, P.S.: Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition. Phys. Solid State 47, 2219–2232 (2005)Google Scholar
- 57.Son, N.T., Isoya, J., Umeda, T., Ivanov, I.G., Henry, A., Ohshima, T., Janzén, E.: EPR and ENDOR studies of shallow donors in SiC. Appl. Magn. Reson. 39, 49–85 (2010)CrossRefGoogle Scholar
- 58.Spaeth, J.-M., Niklas, J.R., Bartram, R.H.: Structural Analysis of Point Defects in Solids. An Introduction to Multiple Magnetic Resonance Spectroscopy. Springer, Berlin, Heidelberg (1992)CrossRefGoogle Scholar
- 59.Kalabukhova, E.N., Lukin, S.N., Mitchel, W.C.: Electrical and multifrequency EPR study of nitrogen and carbon antisite-related native defect in n-type as-grown 4H-SiC. Mater. Sci. Forum 433–436, 499–502 (2003)CrossRefGoogle Scholar
- 60.Son, N.T., Isoya, J., Yamasaki, S., Janzen, E.: Hyperfine interaction of nitrogen donor in 4H-SiC studied by pulsed-ENDOR. In: Nipoti, R., Poggi, A., Scorzoni, A. (eds.) Book of Abstracts of the 5th European Conference on Silicon Carbide and Related Materials, Bolonga, Italy, 2004, pp. 351–354. CNR–IMM, Area Della Ricerca, Bologna (2004)Google Scholar
- 61.Morton, J.R., Preston, K.F.: Atomic parameters for paramagnetic resonance data. J. Magn. Reson. 30, 577–582 (1978)ADSGoogle Scholar
- 62.Smith, W.V., Sorokin, P.P., Gelles, I.L., Lasher, G.J.: Electron-spin resonance of nitrogen donors in diamond. Phys. Rev. 115, 1546–1553 (1959)ADSCrossRefGoogle Scholar
- 63.Keith, L.: Brower: Jahn-Teller-distorted nitrogen donor in laser-annealed silicon. Phys. Rev. Lett. 44, 1627–1629 (1980)CrossRefGoogle Scholar
- 64.Murakami, K., Kuribayashi, H., Masuda, K.: Motional effects between on-center and off-center substitutional nitrogen in silicon. Phys. Rev. B 38, 1589–1592 (1988)ADSCrossRefGoogle Scholar
- 65.Messmer, R.P., Watkins, G.D.: Molecular-orbital treatment for deep levels in semiconductors: substitutional nitrogen and the lattice vacancy in diamond. Phys. Rev. B 7, 2568–2590 (1973)ADSCrossRefGoogle Scholar
- 66.DeLeo, G.G., Fowler, W.B., Watkins, G.D.: Theory of off-center impurities in silicon: substitutional nitrogen and oxygen. Phys. Rev. B 29, 3193–3207 (1984)ADSCrossRefGoogle Scholar
- 67.Pantelides, S.T., Harrison, W.A., Yndurain, F.: Theory of off-center impurities in semiconductors. Phys. Rev. B 34, 6038–6040 (1986)ADSCrossRefGoogle Scholar
- 68.Anderson, F.G.: Pseudo-Jahn-Teller effect for distortions involving oxygen and nitrogen impurities in silicon. Phys. Rev. B 39, 5392–5396 (1989)ADSCrossRefGoogle Scholar
- 69.Veinger, A.I., Zabrodski, A.G., Lomakina, G.A., Mokhov, E.N.: Sov. Phys. Solid State 28, 917 (1986)Google Scholar
- 70.Kalabukhova, E.N., Lukin, S.N., Mokhov, E.N.: Electron spin resonance in 2 mm range of transmutation phosphorus impurity in 6H-SiC. Sov. Phys. Solid State 35, 361–363 (1993)ADSGoogle Scholar
- 71.Heissenstein, H., Peppermueller, C., Helbig, R.: Characterization of phosphorus doped n-type 6H-silicon carbide epitaxial layers produced by nuclear transmutation doping. J. Appl. Phys. 83, 7542–7546 (1998)ADSCrossRefGoogle Scholar
- 72.Troffer, T., Peppermueller, C., Pensl, G., Rottner, K., Schoerner, A.: Phosphorus-related donors in 6H-SiC generated by ion implantation. J. Appl. Phys. 80, 3739–3743 (1996)ADSCrossRefGoogle Scholar
- 73.Heissenstein, H., Helbig, R.: Characterization of SiC: P prepared by nuclear transmutation due to neutrons. Mater. Sci. Forum 353–356, 369–372 (2001)CrossRefGoogle Scholar
- 74.Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L.: EPR study of shallow and deep phosphorous centers in 6H-SiC. Phys. Rev. B 66, 165206 (2002)ADSCrossRefGoogle Scholar
- 75.Gali, A., Deak, P., Briddon, P.R., Devaty, R.P., Choyke, W.J.: Phosphorus-related deep donor in SiC. Phys. Rev. B 61, 12602–12604 (2000)ADSCrossRefGoogle Scholar
- 76.Isoya, J., Ohshima, T., Morishita, N., Kamiya, T., Itoh, H., Yamasaki, S.: Pulsed EPR studies of shallow donor impurities in SiC. Phys. B 340–342, 903–907 (2003)CrossRefGoogle Scholar
- 77.Son, N.T., Henry, A., Isoya, J., Katagiri, M., Umeda, T., Gali, A., Janzen, E.: Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC. Phys. Rev. B 73, 075201 (2006)ADSCrossRefGoogle Scholar
- 78.Rauls, E., Pinheiro, M.V.B., Greulich-Weber, S., Gerstmann, U.: Reassignment of phosphorus-related donors in SiC. Phys. Rev. B 70, 085202 (2004)ADSCrossRefGoogle Scholar
- 79.Baranov, P.G., Ber, B.Ya., Ilyin, I.V., Ionov, A.N., Mokhov, E.N., Muzafarova, M.V., Kaliteevskii, M.A., Kop’ev, P.S., Kaliteevskii, A.K., Godisov, O.N., Lazebnik, I.M.: Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: electron paramagnetic resonance study. J. Appl. Phys. 102, 063713 (2007)Google Scholar
- 80.Pensl, G., Helbig, R.: Silicon carbide (SiC)—recent results in physics and in technology. In: Roessler, U. (ed.) Festkoerperprobleme: Advances in Solid State Physics, vol. 30, pp. 133–156. Vieweg, Braunschweig (1990)Google Scholar
- 81.Lomakina, G.A.: Electrical properties of hexagonal SiC with N and B impurities. Sov. Phys. Solid State 7, 475–479 (1965)Google Scholar
- 82.Anikin, M.M., Lebedev, A.A., Syrkin, A.L., Suvorov, A.V.: Investigation of deep levels in SiC by capacitance spectroscopy methods. Sov. Phys. Semicond. 19, 69 (1985)Google Scholar
- 83.Kuwabara, H., Yamada, S.: Free-to-bound transition in β-SiC doped with boron. Phys. Stat. Sol. (a) 30, 739–746 (1975)ADSCrossRefGoogle Scholar
- 84.Ikeda, M., Matsunami, H., Tanaka, T.: Site effect on the impurity levels in 4H, 6H, and 15R SiC. Phys. Rev. B 22, 2842–2854 (1980)ADSCrossRefGoogle Scholar
- 85.Suttrop, W., Pensl, G., Laning, P.: Boron-related deep centers in 6H-SiC. Appl. Phys. A 51, 231–237 (1990)ADSCrossRefGoogle Scholar
- 86.Ballandovich, V.S., Mokhov, E.N.: Semiconductors 29, 187 (1995)ADSGoogle Scholar
- 87.Ikeda, M., Matsunami, H., Tanaka, T.: Site-dependent donor and acceptor levels in 6H-SiC. J. Luminesc. 20, 111–129 (1979)CrossRefGoogle Scholar
- 88.Ludwig, G.W., Woodbury, H.H.: In Ehrenreich, H., Seitz, F., Turnbull, D. (eds.) Solid State Physics, vol. 13, pp. 223–304. Academic, New York (1962)Google Scholar
- 89.Feher, G., Hensel, J.C., Gere, E.A.: Paramagnetic resonance absorption from acceptors in silicon. Phys. Rev. Lett. 5, 309–312 (1960)ADSCrossRefGoogle Scholar
- 90.Zubatov, A.G., Zaritskii, I.M., Lukin, S.N., Mokhov, E.N., Stepanov, V.G.: Sov. Phys. Solid State 27, 197 (1985)Google Scholar
- 91.Maier, K., Schneider, J., Wilkening, W., Leibenzeder, S., Stein, R.: Electron spin resonance studies of transition metal deep level impurities in SiC. Mater. Sci. Eng. B 11, 27–30 (1992)CrossRefGoogle Scholar
- 92.Baran, N.P., Bratus’, V.Ya., Bugai, A.A., Vikhnin, V.S., Klimov, A.A., Maksimenko, V.M., Petrenko T.L., Romanenko, V.V.: Phys. Solid State 35, 1544 (1993)Google Scholar
- 93.Baranov, P.G., Khramtsov, V.A., Mokhov, E.N.: Chromium in silicon carbide: electron paramagnetic resonance studies. Semicond. Sci. Technol. 9, 1340–1345 (1994)ADSCrossRefGoogle Scholar
- 94.Baranov, P.G., Mokhov, E.N.: Inst. Phys. Conf. Ser., No 142, Chapter 2, pp. 293–296. IOP Publishing Ltd. (1996)Google Scholar
- 95.Baranov, P.G., Mokhov, E.N.: Electron paramagnetic resonance of deep boron in silicon carbide. Semicond. Sci. Technol. 11, 489–494 (1996)ADSCrossRefGoogle Scholar
- 96.Baranov, P.G., Ilyin, I.V., Mokhov, E.N.: Electron paramagnetic resonance of the group-III deep acceptor impurities in SiC. Solid State Commun. 100, 371–376 (1996)ADSCrossRefGoogle Scholar
- 97.Baranov, P.G., Mokhov, E.N.: Electron paramagnetic resonance of beryllium, deep boron, and scandium acceptors in silicon carbide. Phys. Solid State 38, 798–807 (1996)ADSGoogle Scholar
- 98.Lee, K.M., Dang, Le Si, Watkins, G.D., Choyke, W.J.: Optically detected magnetic resonance study of SiC:Ti. Phys. Rev. B 32, 2273–2284 (1985)Google Scholar
- 99.Baranov, P.G., Vetrov, V.A., Romanov, N.G., Sokolov, V.I.: Sov. Phys. Solid State 27, 2085 (1985)Google Scholar
- 100.Baranov, P.G., Romanov, N.G.: ODMR study of recombination processes in ionic crystals and silicon carbide. Appl. Magn. Res. 2, 361–378 (1991)CrossRefGoogle Scholar
- 101.Baranov, P.G., Romanov, N.G.: Acceptors in silicon carbide: ODMR data. Mater. Sci. Forum 83–87, 1207–1212 (1992)CrossRefGoogle Scholar
- 102.Baranov, P.G.: Acceptor Impurities in Silicon Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies, Defect and Diffusion Forum, vols. 148–149, pp. 129–160. Scitec Publications, Switzerland (1997)Google Scholar
- 103.Matsumoto, T., Poluektov, O.G., Schmidt, J., Mokhov, E.N., Baranov, P.G.: Electronic structure of the shallow boron acceptor in 6H-SiC:mA pulsed EPR/ENDOR study at 95 GHz. Phys. Rev. B 55, 2219–2229 (1997)ADSCrossRefGoogle Scholar
- 104.van Duijn-Arnold, A., Ikoma, T., Poluektov, O.G., Baranov, P.G., Mokhov, E.N., Schmidt, J.: Electronic structure of the deep boron acceptor in boron-doped 6H-SiC. Phys. Rev. B 57, 1607–1619 (1998)ADSCrossRefGoogle Scholar
- 105.van Duijn-Arnold, A., Schmidt, J., Poluektov, O.G., Baranov, P.G., Mokhov, E.N.: Electronic structure of the Be acceptor centres in 6H-SiC. Phys. Rev. B 60, 15799–15809 (1999)ADSCrossRefGoogle Scholar
- 106.Petrenko, T.L., Teslenko, V.V., Mokhov, E.N.: Electron nuclear double resonance and electron structure of boron impurity centers in 6H-SiC. Sov. Phys. Semicond. 26, 874 (1992)Google Scholar
- 107.Petrenko, T.L., Bugai, A.A., Baryakhtar, V.G., Teslenko, V.V., Khavryutchenko, V.D.: Cluster calculation of the boron centre in SiC. Semicond. Sci. Technol. 9, 1849–1852 (1994)ADSCrossRefGoogle Scholar
- 108.Muller, R., Feege, M., Greulich-Weber, S., Spaeth, J.-M.: ENDOR investigation of the microscopic structure of the boron acceptor in 6H-SiC. Semicond. Sci. Technol. 8, 1377–1384 (1993)ADSCrossRefGoogle Scholar
- 109.Reinke, J., Muller, R., Feege, M., Greulich-Weber, S., Spaeth, J.-M.: Endor and ODEPR investigation of the microscopic structure of the boron acceptor in 6H-SiC Mat. Sci. Forum 143–147, 63–68 (1994)CrossRefGoogle Scholar
- 110.Reinke, J., Greulich-Weber, S., Spaeth, J.-M., Kalabukhova, E.N., Lukin, S.N., Mokhov, E.N.: Inst. Phys. Conf. Ser. (UK) 137, 211 (1994)Google Scholar
- 111.Adrian, F.J., Greulich-Weber, S., Spaeth, J.-M.: Further evidence for the BSI−-C+ model of the boron acceptor in 6H silicon carbide from a theoretical analysis of the hyperfine interactions. Solid State Comm. 94, 41–44 (1995)ADSCrossRefGoogle Scholar
- 112.Ionov, A.N., Baranov, P.G., Ber, B.Y., Bulanov, A.D., Godisov, O.N., Gusev, A.V., Davydov, V.Yu., Ilyin, I.V., Kaliteevskii, A.K., Kaliteevski, M.A., Safronov, A.Yu., Lazebnik, I.M., Pohl, H.-J., Riemann, H., Abrosimov, N.V., Kop’ev, P.S.: Neutron transmutation doping of silicon 30Si monoisotope with phosphorus. Tech. Phys. Lett. 32, 550–553 (2006)ADSCrossRefGoogle Scholar
- 113.Bachelet, G., Baraff, G.A., Schulter, M.: Defects in diamond: the unrelaxed vacancy and substitutional nitrogen. Phys. Rev. B 24, 4736–4744 (1981)ADSCrossRefGoogle Scholar
- 114.Gray, H.B.: In: Benjamin, W.A. (ed.) Electrons and Chemical Bonding. New York, Amsterdam (1965)Google Scholar
- 115.Romanov, N.G., Vetrov, V.A., Baranov, P.G., Mokhov, E.N., Oding, V.G.: Sov. Tech. Phys. Lett. 11, 483 (1985)Google Scholar
- 116.Baranov, P.G., Romanov, N.G., Vetrov, V.A., Oding, V.G.: In: Anastassakis, E.M., Joannopoulos, J.D. (eds.) Proceedings of the 20th International Conference on the Physics of Semiconductors, vol. 3, p. 1855. World Scientific, Singapore (1990)Google Scholar
- 117.Baranov, P.G., Mokhov, E.N., Hofstaetter, A., Scharmann, A.: Electron-nuclear double resonance of deep-boron acceptors in silicon carbide. JETP Lett. 63, 848–854 (1996)ADSCrossRefGoogle Scholar
- 118.Meyer, B.K., Hofstaetter, A., Baranov, P.G.: On the identification of Al related deep centre in 4H-SiC—self-compensation in SiC? Mater. Sci. Forum 264–268, 591–594 (1998)CrossRefGoogle Scholar
- 119.Watkins, G.D.: Defects in Irradiated Silicon: electron paramagnetic resonance and electron-nuclear double resonance of the aluminum-vacancy pair. Phys. Rev. 155, 802–815 (1967)ADSCrossRefGoogle Scholar
- 120.Maiwald, M., Schirmer, O.F.: O− dynamic Jahn-Teller polarons in KTaO3. Europhys. Lett. 64, 776–782 (2003)ADSCrossRefGoogle Scholar
- 121.Hofstaetter, A., Meyer, B.K., Scharmann, A., Baranov, P.G., Ilyin, I.V., Mokhov, E.N.: X-Band ENDOR of boron and beryllium acceptors in silicon carbide Mater. Sci. Forum 264–268, 595–598 (1998)CrossRefGoogle Scholar
- 122.Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Roenkov, A.D., Khramtsov, V.A.: Electron paramagnetic resonance of scandium in silicon carbide. Phys. Solid State 39, 44–48 (1997)ADSCrossRefGoogle Scholar
- 123.Monemar, B., Paskov, P.P., Bergman, J.P., Toropov, A.A., Shubina, T.V.: Recent developments in the III-nitride materials. Phys. Status Solidi B 244, 1759–1768 (2007)ADSCrossRefGoogle Scholar
- 124.Baraff, G.A., Kane, E.O., Schluter, M.: Silicon vacancy: a possible “Anderson negative-U” system. Phys. Rev. Lett. 43, 956–959 (1979)ADSCrossRefGoogle Scholar
- 125.Watkins, G.D., Troxell, J.R.: Negative-U properties for point defects in silicon. Phys. Rev. Lett. 44, 593–596 (1980)ADSCrossRefGoogle Scholar
- 126.Chadi, D.J., Chang, K.J.: Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1−xAs alloys. Phys. Rev. Lett. 61, 873–876 (1988)ADSCrossRefGoogle Scholar
- 127.Zeisel, R., Bayerl, M.W., Goennenwein, S.T.B., Dimitrov, R., Ambacher, O., Brandt, M.S., Stutzmann, M.: DX-behavior of Si in AlN. Phys. Rev. B 61, R16283–R16286 (2000)ADSCrossRefGoogle Scholar
- 128.Bayerl, M.W., Brandt, M.S., Graf, T., Ambacher, O., Majewski, J.A., Stutzmann, M., As, D.J., Lischka, K.: g values of effective mass donors in AlxGa1−xN alloys. Phys. Rev. B 63, 165204 (2001)ADSCrossRefGoogle Scholar
- 129.Orlinskii, S.B., Schmidt, J., Baranov, P.G., Bickermann, M., Epelbaum, B.M., Winnacker, A.: Observation of the triplet metastable state of shallow donor pairs in AlN crystals with a negative-U behavior: a high-frequency EPR and ENDOR study. Phys. Rev. Lett. 100, 256404 (2008)ADSCrossRefGoogle Scholar
- 130.Soltamov, V.A., Ilyin, I.V., Soltamova, A.A., Mokhov, E.N., Baranov, P.G.: Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance. J. Appl. Phys. 107, 113515 (2010)ADSCrossRefGoogle Scholar
- 131.Glaser, E.R., Kennedy, T.A., Carlos, W.E., Freitas Jr., J.A., Wickenden, A.E., Koleske, D.D.: Optically detected electron-nuclear double resonance of epitaxial GaN. Phys. Rev. B 57, 8957–8965 (1998)ADSCrossRefGoogle Scholar
- 132.Son, N.T., Bickermann, M., Janzen, E.: Shallow donor and DX states of Si in AlN. Appl. Phys. Lett. 98, 092104 (2011)ADSCrossRefGoogle Scholar
- 133.Mason, P.M., Przybylinska, H., Watkins, G.D., Choyke, W.J., Slack, G.A.: Optically detected electron paramagnetic resonance of AlN single crystals. Phys. Rev. B 59, 1937–1947 (1999)ADSCrossRefGoogle Scholar
- 134.Evans, S.M., Giles, N.G., Halliburton, L.E., Slack, G.A., Schujman, S.B., Schowalter, L.J.: Electron paramagnetic resonance of a donor in aluminum nitride crystals. Appl. Phys. Lett. 88, 062112 (2006)ADSCrossRefGoogle Scholar
- 135.Hofmann, D.M., Hofstaetter, A., Leiter, F., Zhou, H., Henecker, F., Meyer, B.K., Orlinskii, S.B., Schmidt, J., Baranov, P.G.: Hydrogen: a relevant shallow donor in zinc oxide. Phys. Rev. Lett. 88, 045504 (2002)ADSCrossRefGoogle Scholar
- 136.Orlinskii, S.B., Schmidt, J., Baranov, P.G., Dyakonov, V.: Identification of shallow Al donors in Al-doped ZnO nanocrystals: EPR and ENDOR spectroscopy. Phys. Rev. B 77, 115334 (2008)ADSCrossRefGoogle Scholar
- 137.Duijn-Arnold, A.v., Ikoma, T., Poluektov, O.G., Baranov, P.G., Mokhov, E.N., Schmidt, J.: Electronic structure of the deep boron acceptor in boron-doped 6H-SiC. Phys. Rev. B 57, 1607–1619 (1998)Google Scholar
- 138.Park, C.H., Chadi, D.J.: Stability of deep donor and acceptor centers in GaN, AlN, and BN Phys. Rev. B 55, 12995–13001 (1997)CrossRefGoogle Scholar
- 139.Boguslawski, P., Bernholc, J.: Doping properties of C, Si, and Ge impurities in GaN and AlN. Phys. Rev. B 56, 9496–9505 (1997)ADSCrossRefGoogle Scholar
- 140.Van de Walle, C.G.: DX-center formation in wurtzite and zinc-blende AlxGa1−xN. Phys. Rev. B 57, R2033–R2036 (1998)ADSCrossRefGoogle Scholar
- 141.Mokhov, E.N., Avdeev, O.V., Barash, I.S., Chemekova, T.Y., Roenkov, A.D., Segal, A.S., Wolfson, A.A., Makarov, Yu.N., Ramm, M.G., Helava, H.: Sublimation growth of AlN bulk crystals in Ta crucibles. J. Cryst. Growth 281, 93–100 (2005)ADSCrossRefGoogle Scholar
- 142.Slack, G.A., Schowalter, L.J., Morelli, D., Freitas, J.A.: Some effects of oxygen impurities on AlN and GaN. J. Cryst. Growth 246, 287–298 (2002)ADSCrossRefGoogle Scholar
- 143.Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu., Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., Helava, H.: Experimental and theoretical analysis of sublimation growth of AlN bulk crystals. J. Cryst. Growth 310, 881–886 (2008)ADSCrossRefGoogle Scholar
- 144.Lu, P., Collazo, R., Dalmau, R.F., Durkaya, G., Dietz, N., Sitar, Z.: Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations. Appl. Phys. Lett. 93, 131922 (2008)ADSCrossRefGoogle Scholar
- 145.Yang, S., Evans, S.M., Halliburton, L.E., Slack, G.A., Shujman, S.B., Morgan, K.E., Bondokov, R.T., Mueller, S.G.: Electron paramagnetic resonance of Er3+ ions in aluminum nitride. J. Appl. Phys. 105, 023714 (2009)ADSCrossRefGoogle Scholar
- 146.Bickermann, M., Epelbaum, B.M., Filip, O., Heimann, P., Nagata, S., Winnacker, A.: UV transparent single-crystalline bulk AlN substrates. Phys. Status Sol. C 7, 21 (2010)CrossRefGoogle Scholar
- 147.Stamp, C., Van de Walle, C.G.: Theoretical investigation of native defects, impurities, and complexes in aluminum nitride. Phys. Rev. B 65, 155212 (2002)ADSCrossRefGoogle Scholar
- 148.Vainer, V.S., Veinger, V.I., Il’in, V.A., Tsvetkov, V.F.: Electron spin resonance associated with the triplet state of secondary thermal defects in 6H-SiC. Sov. Phys. Solid State 22, 2011–2013 (1980) [Fiz. Tverd. Tela. (Leningrad) 22, 3436–3439 (1980)]Google Scholar
- 149.Vainer, V.S., Il’in, V.A.: Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide. Sov. Phys. Solid State 23, 2126–2133 (1981) [Fiz. Tverd. Tela. (Leningrad) 23, 3659–3671 (1981)]Google Scholar
- 150.Pavlov, N.M., Iglitsyn, M.I., Kosaganova, M.G., Solomatin, V.N.: Spin-1 centers in silicon carbide irradiated with neutrons and α-particles. Sov. Phys. Semicond. 9, 845–849 (1975) [Fiz. Tekn. Poluprovodn. 9, 1279–1285 (1975)]Google Scholar
- 151.Romanov, N.G., Vetrov, V.A., Baranov, P.G.: Optically detected magnetic resonance in silicon carbide containing radiation and thermal defects. Sov. Phys. Semicond. 20, 96 (1986)Google Scholar
- 152.Jaccard, C., Ruedin, Y., Aegerter, M., Schnegg, P.-A.: Weak magnetic field enhancement of the luminescence from F centre pairs in alkali halides. Phys. Stat. Sol. B 50, 187–198 (1972)ADSCrossRefGoogle Scholar
- 153.Gourary, B.S., Adrian, F.S.: Wave functions for electron-excess color centers in alkali halide crystals. Solid State Phys. 10, 127–247 (1960)Google Scholar
- 154.Bennebroek, M.T., Arnold, A., Poluektov, O.G., Baranov, P.G., Schmidt, J.: Shallow electron centers in silver halides. Phys. Rev. B 54, 11276–11289 (1996). and references thereinADSCrossRefGoogle Scholar
- 155.Clementi, E., Roetti, C.: Roothaan-Hartree-Fock atomic wavefunctions: basis functions and their coefficients for ground and certain excited states of neutral and ionized atoms, Z ≤ 54. At. Data Nucl. Data Tables 14, 177–478 (1974)ADSCrossRefGoogle Scholar
- 156.Sonder, E., Schweinler, H.C.: Magnetism of interacting donors. Phys. Rev. 117, 1216–1221 (1960)ADSCrossRefGoogle Scholar
- 157.Abragam, A., Bleaney, B.: Electron Paramagnetic Resonance of Transition Ions. Oxford University Press, Oxford (1970)Google Scholar
- 158.Yavkin, B.V., Soltamov, V.A., Babunts, R.A., Anisimov, A.N., Baranov, P.G., Shakhov, F.M., Kidalov, S.V., Vul’, A.Ya., Mamin, G.V., Orlinskii, S.B.: Defects in nanodiamonds: application of high-frequency cw and pulse EPR, ODMR. Appl. Magn. Reson. 45, 1035–1049 (2014)Google Scholar
- 159.Carlos, W.E., Freitas, J.A., Asif Khan, M., Olson, D.T., Kuznia, J.N.: Electron-spin-resonance studies of donors in wurtzite GaN. Phys. Rev. B 48, 17878–17884 (1993)Google Scholar
- 160.Watkins, G.D.: EPR of defects in semiconductors: past, present, future. Phys. Solid State 41, 746–750 (1999)ADSCrossRefGoogle Scholar
- 161.Weber, E.R.: Transition metals in silicon. Appl. Phys. A 30, 1–22 (1983)ADSCrossRefGoogle Scholar
- 162.Ludwig, G.W., Woodbury, H.H.: Electron Spin Resonance in Semiconductors. In: Seitz, F., Turnbull, D. (eds.) Solid State Physics, vol. 13, pp. 223–304. Academic Press, N.Y. (1962)Google Scholar
- 163.Baur, J., Kunzer, M., Schneider, J.: Transition metals in SiC polytypes, as studied by magnetic resonance techniques. Phys. Stat. Sol. (a) 162, 153–172 (1997)ADSCrossRefGoogle Scholar
- 164.Baranov, P.G.: Radiospectroscopy of wide-gap semiconductors: SiC and GaN. Phys. Solid State 41, 712–715 (1999)ADSCrossRefGoogle Scholar
- 165.Baranov, P.G., Khramtsov, V.A., Mokhov, E.N.: Chromium in silicon carbide: electron paramagnetic resonance studies. Semicond. Sci. Technol. 9, 1340–1345 (1994)ADSCrossRefGoogle Scholar
- 166.Dombrowski, K.F., Kunzer, M., Kaufmann, U., Schneider, J., Baranov, P.G., Mokhov, E.N.: Identification of molybdenum in 6H-SiC by magnetic resonance techniques. Phys. Rev. B 54, 7323–7327 (1996)ADSCrossRefGoogle Scholar
- 167.Baur, J., Kunzer, M., Dombrowski, K.F., Kaufmann, U., Schneider, J., Baranov, P.G., Mokhov, E.N.: Identification of multivalent molybdenum impurities in SiC crystals. Inst. Phys. Conf. Ser. 155, 933–936 (1997)Google Scholar
- 168.Baranov, P.G., Ilyin, I.V., Mokhov, E.N.: Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance. Solid State Commun. 101, 611–615 (1997)ADSCrossRefGoogle Scholar
- 169.Baranov, P.G., Ilyin, I.V., Mokhov, E.N.: Electron paramagnetic resonance of erbium in bulk silicon carbide crystals. Solid State Commun. 103, 291–295 (1997)ADSCrossRefGoogle Scholar
- 170.Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Roenkov, A.D., Khramtsov, V.A.: Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies. Phys. Solid State 41, 783–785 (1999)ADSCrossRefGoogle Scholar
- 171.Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Khramtsov, V.A.: Identification of iron in 6H–SiC crystals by electron paramagnetic resonance. Semicond. Sci. Technol. 16, 39–43 (2001)ADSCrossRefGoogle Scholar
- 172.Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Khramtsov, V.A.: Identification of iron and nickel in 6H-SiC by electron paramagnetic resonance. Mater. Sci. Forum 353–356, 529–532 (2001)CrossRefGoogle Scholar
- 173.Abragam, A., Bleaney, B.: Electron Paramagnetic Resonance of Transition Ions. Clarendon Press, Oxford (1970)Google Scholar
- 174.Schneider, J.: Notizen: Paramagnetische resonanz von Fe+++-Ionen in synthetischen ZnO-kristallen. Z. Naturforsch A 17, 189–190 (1962)ADSGoogle Scholar
- 175.Maier, K., Kunzer, M., Kaufmann, U., Schneider, J., Monemar, B., Akasaki, I., Amano, H.: Iron acceptors in gallium nitride (GaN). Mat. Sci. Forum 143–147, 93–98 (1994)CrossRefGoogle Scholar
- 176.Baur, J., Maier, K., Kunzer, M., Kaufmann, U., Schneider, J.: Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron. Appl. Phys. Lett. 65, 2211–2213 (1994)ADSCrossRefGoogle Scholar
- 177.Son, N.T., Trinh, X.T., Gällström, A., Leone, S., Kordina, O., Janzén, E., Szász, K., Ivády, V., Gali, A.: Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC. J. Appl. Phys. 112, 083711 (2012)ADSCrossRefGoogle Scholar
- 178.Soltamov, V.A., Ilyin, I.V., Soltamova, A.A., Mokhov, E.N., Baranov, P.G.: Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance. J. Appl. Phys. 107, 113515 (2010)ADSCrossRefGoogle Scholar
- 179.Baur, J., Kunzer, M., Maier, K., Kaufmann, U., Schneider, J.: Determination of the GaN/A1 N band discontinuities via the (-/0) acceptor level of iron. Mater. Sci. Eng., B 29, 61–64 (1995)CrossRefGoogle Scholar
- 180.Kaufmann, U.: EPR and optical absorption of Fe+, Fe2+, Fe3+, and Fe4+ on tetragonal sites in CdSiP2. Phys. Rev. B 14, 1848–1857 (1976)ADSCrossRefGoogle Scholar
- 181.Gehlhoff, W., Azamat, D., Hoffmann, A., Dietz, N., Voevodina, O.V.: Transition metals in ZnGeP2 and other II–IV–V2 compounds. Phys. B 376–377, 790–794 (2006)CrossRefGoogle Scholar
- 182.Langer, J.M., Heinrich, H.: Deep-level impurities: a possible guide to prediction of band-edge discontinuities in semiconductor heterojunctions. Phys. Rev. Lett. 55, 1414–1417 (1985)ADSCrossRefGoogle Scholar
- 183.Heitz, R., Maxim, P., Eckey, L., Thurian, P., Hoffmann, A., Broser, I., Pressel, K., Meyer, B.K.: Excited states of Fe3+ in GaN. Phys. Rev. B 55, 4382–4387 (1997)ADSCrossRefGoogle Scholar
- 184.Nepal, N., Nakarmi, M.L., Ang, H.U., Lin, J.Y., Jiang, H.X.: Growth and photoluminescence studies of Zn-doped AlN epilayers. Appl. Phys. Lett. 89, 192111 (2006)ADSCrossRefGoogle Scholar
- 185.Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., Burns, M.: Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 76, 1363–1398 (1994)ADSCrossRefGoogle Scholar
- 186.Vodakov, YuA, Mokhov, E.N., Roenkov, A.D., Saidbekov, D.T.: Effect of crystallographic orientation on the polytype stabilization and transformation of silicon carbide. Phys. Stat. Sol. (a) 51, 209–215 (1979)ADSCrossRefGoogle Scholar
- 187.Vodakov, YuA, Karklina, M.I., Mokhov, E.N., Roenkov, A.D.: Inorganic Mater. 17, 537 (1980)Google Scholar
- 188.Wetzel, C., Volm, D., Meyer, B.K., Pressel, K., Nilsson, S., Mokhov, E.N., Baranov, P.G.: GaN on 6H-SiC—structural and optical properties. Mat. Res. Soc. Symp. Proc. 339, 453–458 (1994)CrossRefGoogle Scholar
- 189.Wetzel, C., Volm, D., Meyer, B.K., Pressel, K., Nilsson, S., Mokhov, E.N., Baranov, P.G.: GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique. Appl. Phys. Lett. 65, 1033–1035 (1994)ADSCrossRefGoogle Scholar
- 190.Pressel, K., Nilsson, S., Heitz, R., Hoffmann, A., Meyer, B.K.: Photoluminescence study of the 1.047 eV emission in GaN. J. Appl. Phys. 79, 3214–3218 (1996)ADSCrossRefGoogle Scholar
- 191.Baranov, P.G., Ilyin, I.V., Mokhov, E.N.: Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance. Solid State Commun. 101, 611–615 (1997)ADSCrossRefGoogle Scholar
- 192.Abragam, Bleaney, B.: Electron Paramagnetic Resonance of Transition Ions, vol. 1, ch. 7. Clarendon Press, Oxford (1970)Google Scholar
- 193.Hausmann, A.: The cubic field parameter of 6S52 ions in zinc oxide crystals. Sol. St. Comm. 6, 457–459 (1968)ADSCrossRefGoogle Scholar
- 194.Holton, W.C., Schneider, J., Estle, T.L.: Electron paramagnetic resonance of photosensitive iron transition group impurities in ZnS and ZnO. Phys. Rev. 133, A1638–A1641 (1964)ADSCrossRefGoogle Scholar
- 195.Graf, T., Gjukic, M., Hermann, M., Brandt, M.S., Stutzmann, M., Ambacher, O.: Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films. Phys. Rev. B 67, 165215 (2003)ADSCrossRefGoogle Scholar
- 196.Masterov, V.F.: Electronic structure of the rare earth impurities in III–V compounds. Fiz. Tekh. Poluprovodn. 27, 1435–1452 (1993)Google Scholar
- 197.Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.-H., Poate, J.M., Kimerling, J.: Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon. Appl. Phys. 70, 2672–2678 (1991)CrossRefGoogle Scholar
- 198.Jantsch, W., Przybylinska, H.: In: Schefler, M., Zimmermann, R. (eds.) Proceedings of 23rd International Conference on Physics Semiconductor (Berlin, July 21–26, 1996), pp. 3025–3032. World Scientific, Singapore-New Jersey-London-Hong-Kong (1996)Google Scholar
- 199.Choyke, W.J., Devaty, R.P., Clemen, L.L., Yoganathan, M., Pensl, G., Haessier, Ch.: Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC. Appl. Phys. Lett. 65, 1668–1670 (1994)ADSCrossRefGoogle Scholar
- 200.Carey, J.D., Donegan, J.F., Barklie, R.C., Priolo, F., Franzo, G., Coffa, S.: Electron paramagnetic resonance of erbium doped silicon. Appl. Phys. Lett. 69, 3854–3856 (1996)ADSCrossRefGoogle Scholar
- 201.Vodakov, YuA, Mokhov, E.N., Ramm, M.G., Roenkov, A.D.: Epitaxial growth of SiC layers by sublimation sandwich method. Krist. und Techn. 14, 729–740 (1979)CrossRefGoogle Scholar
- 202.Baranov, P.G., Il’in, I.V., Mokhov, E.N., Pevtsov, A.B., Khramtsov, V.A.: Erbium in silicon carbide crystals: EPR and high-temperature luminescence. Phys. Solid State 41, 32–34 (1999)Google Scholar
- 203.Babunts, R.A., Vetrov, V.A., Il’in, I.V., Mokhov, E.N., Romanov, N.G., Khramtsov, V.A., Baranov, P.G.: Properties of erbium luminescence in bulk crystals of silicon carbide. Phys. Solid State 42, 829–835 (2000)Google Scholar
- 204.Baranov, P.G., Zhekov, V.I., Murina, T.M., Prokhorov, A.M. Khramtsov, V.A.: Sov. Phys. Solid State 29, 723 (1987) [Fiz. Tverd. Tela 29, 1261 (1987)]Google Scholar
- 205.Lea, K.R., Leask, M.J.M., Wolf, W.P.: The raising of angular momentum degeneracy of f-Electron terms by cubic crystal fields. J. Phys. Chem. Solids 23, 1381–1405 (1962)ADSMATHCrossRefGoogle Scholar
- 206.Watts, R.K., Holton, W.C.: Paramagnetic-resonance studies of rare-earth impurities in II–VI compounds. Phys. Rev. 173, 417–426 (1968)ADSCrossRefGoogle Scholar
- 207.Kunzer, M., Müller, H.D., Kaufmann, U.: Magnetic circular dichroism and site-selective optically detected magnetic resonance of the deep amphoteric vanadium impurity in 6H-SiC. Phys. Rev. B 48, 10846–10854 (1993)ADSCrossRefGoogle Scholar
- 208.Choyke, W.I., Devaty, P.R., Yoganathan, M., Pensl, G., Edmond, J.A.: In: Ammerlaan, C.A.J., Pajot, B. (eds.) Proceedings of International Conference on Shallow-Level Centers in Semiconductors (Amsterdam, 17–19 July, 1996), pp. 297–302. World Scientific Publishing Company (1997)Google Scholar
- 209.Il’in, N.P., Masterov, V.F.: A calculation of energy spectra of binary semiconductors doped with rare-earth elements. Fiz. Tekh. Poluprovodn. 29, 1591–1602 (1995)Google Scholar
- 210.Il’in, N.P., Masterov, V.F.: Electronic structure of the Er-O6 complex in silicon. Semicond. 31, 886–892 (1997) Google Scholar
- 211.Przybylinska, H., Jantsch, W., Suprun-Belevitch, Yu., Stepikhova, M., Palmetshofer, L., Hendorfer, G., Kozanecki, A., Wilson, R.J., Sealy, B.J.: Optically active erbium centers in silicon. Phys. Rev. B 54, 2532–2547 (1996)ADSCrossRefGoogle Scholar
- 212.Kimerling, L.S., Kolenbrander, K.D., Michel, J., Palm, J.: Light emission from silicon. Solid State Phys. 50, 333–381 (1996)Google Scholar
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