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Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices

  • T. Ayalew
  • T. Grasser
  • H. Kosina
  • S. Selberherr

Abstract

In contrast to narrow bandgap semiconductors such as silicon, common doping elements in SiC have activation energies larger than the thermal energy kB Teven at room temperature. Inequivalent α-SiC sites, one with cubic (k) surrounding and the other with hexagonal (h) surrounding are expected to cause site-dependent impurity levels. Therefore, an appropriate incomplete ionization model which accounts for lattice sitedependent ionization level of impurities in a-SiC has been developed and implemented in the general-purpose device simulator MINIMOS-NT.

Keywords

Ionization Energy Ionization Level Ionization Degree Narrow Bandgap Semiconductor Inequivalent Site 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    S. Selberherr, IEEE Trans.Electron Devices 36, 1464 (1989).CrossRefGoogle Scholar
  2. [2]
    T. Ayalew, Dissertation, SiC Semiconductor Devices Technology, Modeling, and Simulation, TU Vienna, Austria, 2004, http://www.iue.tuwien.ac.at/phd/ayalew/./phd/ayalew/.
  3. [3]
    M. Ikeda et al., Physical Review B 22, 2842 (1980).CrossRefGoogle Scholar
  4. [4]
    Minimos-NT, Device and Circuit Simulator, User’s Guide, Institute for Microelectronics, TU Vienna, Austria, 2002, http://www.iue.tuwien.ac.at/mmnt/./mmnt/.
  5. [5]
    C. M. Zetterling, EMIS series, no. 2, INSPEC, IEE, UK (2002).Google Scholar

Copyright information

© Springer-Verlag Wien 2004

Authors and Affiliations

  • T. Ayalew
    • 1
  • T. Grasser
    • 1
  • H. Kosina
    • 2
  • S. Selberherr
    • 2
  1. 1.Christian Doppler Laboratory for TCAD in MicroelectronicsInstitute for MicroelectronicsGermany
  2. 2.Institute for Microelectronics, TU ViennaWienAustria

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