Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices
In contrast to narrow bandgap semiconductors such as silicon, common doping elements in SiC have activation energies larger than the thermal energy kB Teven at room temperature. Inequivalent α-SiC sites, one with cubic (k) surrounding and the other with hexagonal (h) surrounding are expected to cause site-dependent impurity levels. Therefore, an appropriate incomplete ionization model which accounts for lattice sitedependent ionization level of impurities in a-SiC has been developed and implemented in the general-purpose device simulator MINIMOS-NT.
KeywordsIonization Energy Ionization Level Ionization Degree Narrow Bandgap Semiconductor Inequivalent Site
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