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Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors

  • M. Pourfath
  • E. Ungersboeck
  • A. Gehring
  • B. H. Cheong
  • H. Kosina
  • S. Selberherr
Conference paper

Abstract

Two-dimensional (2D) and three-dimensional (3D) electrostatic analyses of Schottky barrier carbon nanotube field effect transistors (CNTFETs) are carried out. Comparisons between 2D and 3D simulation results for symmetric and asymmetric structures indicate that 2D simulations do not describe the behavior of the device accurately, suggesting that to understand and improve the behavior of CNTFETs 3D electrostatic analysis is required.

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Copyright information

© Springer-Verlag Wien 2004

Authors and Affiliations

  • M. Pourfath
    • 1
  • E. Ungersboeck
    • 1
  • A. Gehring
    • 1
  • B. H. Cheong
    • 2
  • H. Kosina
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaWienAustria
  2. 2.Computational Science and Engineering LabSamsung Advanced Institute of TechnologySuwonKorea

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