Photo- and Electro-Luminescence of Rare Earth (Er, Yb)-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition

  • K. Takahei
  • P. Whitney
  • H. Nakagome
  • K. Uwai
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Rare earth (Er,Yb)-doped GaAs and InP epitaxial layers are grown by metalorganic chemical vapor deposition, and light emitting diodes are fabricated from these materials. Rare earth-related electroluminescence of Er-doped GaAs is observed up to room temperature, while that of Yb-doped InP is only observed up to about 140 K. The temperature dependence of efficiency and decay time constant of photoluminescence indicates that, for both materials, the decrease of luminescence intensity at elevated temperature is mainly due to de-excitation of excited rare earth ions in the host crystals, and not due to a decrease of energy transfer efficiency from host to rare earth ions.

Keywords

Rare Earth Luminescence Intensity Liquid Phase Epitaxy Energy Transfer Efficiency Metalorganic Chemical Vapor Deposition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • K. Takahei
    • 1
  • P. Whitney
    • 1
  • H. Nakagome
    • 1
  • K. Uwai
    • 1
  1. 1.NTT Basic Research LaboratoriesMusashino-shi, Tokyo 180Japan

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