HBTs Using a-SiC and <Emphasis Type="Italic">µ</Emphasis>c-Si

S. Furukawa; K. Sasaki

doi:10.1007/978-3-642-84804-9_43

Amorphous and Crystalline Silicon Carbide IV pp 298-304 | Cite as

HBTs Using a-SiC and µc-Si

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Authors and affiliations

S. Furukawa
K. Sasaki

Conference paper

Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Heterojunction structures between non-crystalline materials including amorphous/ microcrystalline phase and crystalline Si substrates are intensively investigated. The correlation of their electrical energy band structure and crystallographical structure is discussed. When µc-Si is deposited directly onto the crystalline Si substrate, crystallization of µc-Si takes place in the vicinity of the interface, so that a Si homojunction is formed. By inserting an a-SiC buffer layer as thin as a few nm, the crystallization or the formation of homojunction is successfully suppressed. As the result, it has been found that an abrupt and a uniform amorphous/crystalline Si heterointerface is obtained. A current gain as high as 523 is achieved by using this multilayered emitter structure.

Keywords

Buffer Layer Threshold Energy Current Gain Heterojunction Bipolar Transistor High Energy Side

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Authors and Affiliations

S. Furukawa
- 1
K. Sasaki
- 1

1.Graduate School of Science and EngineeringTokyo Institute of TechnologyMidori-ku, Yokohama 227Japan