Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D Electron Gas
Conference paper
Abstract
We report on the observation of a new phenomenon: a sequence of magnetic field induced transitions between well defined Quantum Hall effect states, with a Hall resistance quantized as h/e2 and a vanishingly small longitudinal resistance, and insulator states with longitudinal resistance exceeding 2 GΩ. This phenomenon is observed in extremely high mobility Si MOSFETs, in a range of electron concentrations corresponding to a dilute 2D electron gas in or near an activated electronic transport regime. We attribute this effect to a modulation of the metal-insulator transition by the Quantum Hall effect.
Keywords
Quantum Hall Effect Insulator State Hall Resistance Fractional Quantum Hall Effect Longitudinal Resistance
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