Ultrafast Phenomena VII pp 297-299 | Cite as
Subpicosecond Photoconductivity in III-V Compound Semiconductors Using Low Temperature MBE Growth Techniques
Conference paper
Abstract
Molecular beam epitaxial growth of III-V semiconductors at very low temperatures results in ultrashort carrier lifetimes. We have characterized this by photoconductive switching and time-resolved reflectivity measurements.
Keywords
GaAs Layer Grown Layer Molecular Beam Epitaxial Photoconductive Switch GaAs Epilayers
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© Springer-Verlag Berlin, Heidelberg 1990