Surface-Field Induced InAs Tunnel Junctions in High Magnetic Fields

  • U. Kunze
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

Tunneling from an electron inversion layer into bulk valence states is studied in Yb/oxide/degenerate p-InAs tunnel junctions. Magneto-tunneling characteristics yield the effective electric field for Zener transitions and demonstrate a striking difference to Esaki diodes.

Keywords

Bias Voltage Tunnel Junction Forward Bias Longitudinal Magnetic Field Effective Electric Field 
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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • U. Kunze
    • 1
    • 2
  1. 1.Institut für ElektrophysikTechnische Universität BraunschweigBraunschweigFed. Rep. of Germany
  2. 2.Hochmagnetfeldanlage der Physikalischen InstituteTechnischen Universität BraunschweigBraunschweigFed. Rep. of Germany

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