High Magnetic Fields in Semiconductor Physics II pp 305-308 | Cite as
Magneto-optical and Magneto-transport Investigations of a Wide Modulation Doped (InGa)As/InP Quantum Well
Conference paper
Abstract
Photoluminescence measurements in magnetic fields up to 10 T on a 80 nm wide modulation doped (InGa)As/InP quantum well are reported. Magneto-luminescence from three electron subbands is observed. Magneto-transport measurements (with B both perpendicular and parallel to the plane of the well) also demonstrate occupancy of three subbands. Discontinuities in the Landau level transition energies observed in photoluminescence at certain field values are interpreted in terms of charge redistribution effects between the subbands.
Keywords
Quantum Well Landau Level Wide Modulation Sheet Density Subband Energy
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