GaAs-Planartechnologie

  • Walter Kellner
  • Hermann Kniepkamp
Chapter
Part of the Halbleiter-Elektronik book series (HALBLEITER, volume 16)

Zusammenfassung

Die Technologie des GaAs-MESFET umfaßt eine Folge von komplexen Einzelprozessen, die reproduzierbar beherrscht werden müssen. Auf dieser Grundlage lassen sich schließlich Bauelemente herstellen, welche die aus den physikalischen Gegebenheiten des GaAs zu erwartenden guten Hochfrequenzeigenschaften aufweisen.

This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literaturverzeichnis

  1. 5.1
    Runyan, W. R.: Silicon semiconductor technology. New York, San Francisco, Toronto, London, Sidney: McGraw-Hill 1965.Google Scholar
  2. 5.2
    Mullin, J. B.; Heritage, R. J.; Holliday, C. H.; Straughan, B. W.: Liquid encapsulation crystal pulling at high pressures. J. Cryst. Growth 34 (1968) 281–285.CrossRefGoogle Scholar
  3. 5.3
    Gremmelmaier, R.: Herstellung von InAs-and GaAs-Ein- kristallen. Z. Naturforsch. 11a (1956) 511–513.Google Scholar
  4. 5.4
    Pfann, W. G.: Principles of zone melting. J. Met. 4 (1952) 747–753.Google Scholar
  5. 5.5
    Au Coin, T. R.; Ross, R. L.; Wade, M. J.; Savage, R. O.: Liquid encapsulated compounding and Czochralski growth of semi-insulating GaAs. Solid State Technol. (Jan. 1979) 59–67.Google Scholar
  6. 5.6
    Cronin, G. R.; Haisty, R. W.: The preparation of semi-insulating GaAs by Chromium doping. J. Electrochem. Soc. 111 (1964) 874–877.CrossRefGoogle Scholar
  7. 5.7
    Fairman, R. D.; Chen, R. T.; Oliver, J. R.; Ch’en, D. R.: Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications. IEEE Trans. ED-28 (1981) 135–140.Google Scholar
  8. 5.8
    Knight, T. R.; Effer, D.; Evans, P. R.: The preparation of high purity GaAs by vapour phase epitaxial growth. Solid State Electron. 8 (1965) 178–180.CrossRefGoogle Scholar
  9. 5.9
    Kniepkamp, H. et al.: Monolithisch integrierte Schaltungen auf GaAs. Bundesministerium für Forschung und Technologie, Forschungsber. T 79–172, Dez. 1979.Google Scholar
  10. 5.10
    Di Lorenzo, J. V.: Vapor growth of epitaxial GaAs: a summary of parameters which influence the purity and morphology of epitaxial layers. J. Cryst. Growth 17 (1972) 189–206.CrossRefMathSciNetGoogle Scholar
  11. 5.11
    Küpper, P.; Bruch, H.; Heyen, M.; Balk, P.: On the role of silicon during growth of VPE GaAs-layers. J. Electron. Mater. 5 (1976) 455–472.CrossRefGoogle Scholar
  12. 5.12
    Ruge, I.; Müller, H.; Ryssel, H.: Die Ionenimplantation als Dotiertechnologie. Festkörperprobleme, Bd. XII. (Hrsg.: O. Madelung). Advances in Solid State Physics. Braunschweig: Vieweg. Oxford: Pergamon 1972.Google Scholar
  13. 5.13
    Gibbons, J. F.: Ion-Implantation in semiconductors,Part I: Range distribution theory and experiments. Proc. IEEE 56 (1968) 205–319; Damage production and annealing. Proc. IEEE 60 (1972) 1062–1096.Google Scholar
  14. 5.14
    Donnelly, J. P.: Ion implantation in GaAs. GaAs and related compounds. St. Louis 1976. Inst. Phys. Conf. Ser. 33b (1977) 166–190.Google Scholar
  15. 5.15
    Malbon, R. M.; Lee, D. H.; Whelan, J. M.: Annealing of ion-implanted GaAs in a controlled atmosphere. J. Electrochem. Soc. 123 (1976) 1413–1415.CrossRefGoogle Scholar
  16. 5.16
    Magee, T. J.; Lee, K. S.; Ormond, R.: Annealing of damage and redistribution of Cr in boron-implanted Si3N4capped GaAs. Appl. Phys. Lett. 37 (1980) 447–449.CrossRefGoogle Scholar
  17. 5.17
    Feng, M.; Kwok, S. P.; Eu, V.; Henderson, B. W.: Study Of electrical and chemical properties of Si implanted in semi-insulating GaAs substrates annealed under S102 and capless. J. Appl. Phys. 52 (1981) 2990–2993.CrossRefGoogle Scholar
  18. 5.18
    Debney, B. T.; Jay, P. R.: The influence of Cr on the mobility of electrons in GaAs FETs. Solid State Electron. 23 (1980) 773–781.CrossRefGoogle Scholar
  19. 5.19
    Lindhard, J.; Scharff, M.; Schi$tt, H.: Kgl. Danske. Vid. Selskab., Mat.-Fys. Medd. 33 (1963).Google Scholar
  20. 5.20
    Gibbons, J. F.; Johnson, W. F.; Mylroie, S. W.: Projected range statistics. Stroudsburg/Pa: Dowden, Hutchinson and Ross, 1975.Google Scholar
  21. 5.21
    Eisen, F.; Kirckpatrick, C.; Asbeck, P.: Implantation into GaAs. In:,GaAs FET principles and technology (Ed.Di Lorenzo, J. V.; Khandelwal, D. D.) Dedham/Mass.: Artech House, 1982, pp. 117–144.Google Scholar
  22. 5.22
    Hatzakis, M.; Canavello, B. J.; Shaw, J. M.: Single-step optical lift-off process. IBM J. Res. Dev. 24 (1980) 452–460.Google Scholar
  23. 5.23
    Ch’en, D. R.; Cooke, H. F.; Wholey, J. N.; Policy, G. J.: Long term stabilization of microwave FETs. ISSCC Dig. Tech. Papers (1976) 160–161.Google Scholar
  24. 5.24
    Sekido, K.; Arden, J. A.: Recent advances in FET device performance and reliability. MSN (April/Mai 1976 ) 71–81.Google Scholar
  25. 5.25
    Itoh, H.; Ohata, K.; Hasegawa, F.: Influence of the surface and episubstrate interface on the drain current drift of GaAs MESFETs. IEEE Trans. ED-28 (1981) 878–882.Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • Walter Kellner
    • 1
  • Hermann Kniepkamp
    • 1
  1. 1.Zentrale Forschung und Entwicklung der Siemens AGMünchenDeutschland

Personalised recommendations